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Solutions for integrated circuit integration of alternative active area materials

An active area and source technology, applied in the direction of circuits, electrical components, electrical solid devices, etc.

Active Publication Date: 2008-09-17
AMBERWAVE SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, the drive to increased carrier mobility (and the concomitant device drive current) will soon require the use of other, more highly lattice-mismatched materials that have historically been used in Si-based devices, requiring further changes to traditional device integration flows. multiple disruptive changes

Method used

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  • Solutions for integrated circuit integration of alternative active area materials
  • Solutions for integrated circuit integration of alternative active area materials
  • Solutions for integrated circuit integration of alternative active area materials

Examples

Experimental program
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Embodiment Construction

[0042] Referring to Figures 1a-1c and 2a-2g, planar isolation regions may be used for selective epitaxy of active region material. Referring to Figures 1a, 2a and 2b, a substrate 100 includes a crystalline semiconductor material. The substrate 100 may be, for example, a bulk silicon wafer, a bulk germanium wafer, a semiconductor-on-insulator (SOI) substrate, or a strained semiconductor-on-insulator (SSOI) substrate. The mask layer 110 is formed on the substrate 100 . The mask layer 110 may be an insulator layer including, for example, silicon dioxide, aluminum oxide, silicon nitride, silicon carbide, or diamond, and may have a thickness t of, for example, 50-1000 nanometers (nm) 1 . The mask layer 110 may be formed by a deposition method such as chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), or a physical deposition method such as sputtering. Alternatively, the mask layer 110 may be formed ...

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Abstract

Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.

Description

[0001] Related applications [0001] This application claims priority to US Provisional Application 60 / 702,363, filed July 26, 2005, the entire contents of which are incorporated herein by reference. technical field [0002] The present invention relates to methods and materials for the formation of structures comprising alternating active region materials. Background technique [0003] As the geometric scale of Si-based MOSFET technologies becomes increasingly challenging, the impurity integration of alternative materials with Si becomes an attractive option to increase the intrinsic carrier mobility of the MOSFET channel. Hybrid integration of alternative materials is therefore very limited to the addition of small amounts of Ge to SiGe alloys used as source-drain contact materials or heterojunction bipolar transistor base layers. Because this layer is only slightly lattice mismatched with Si and because most modern Si MOSFET processes are compatible with these dilute Si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8238H01L29/10H01L21/8234
CPCH01L29/7833H01L21/823814H01L29/1054H01L29/165H01L27/0605H01L21/8258H01L29/7848H01L29/66636H01L29/7834H01L21/823842H01L21/823807H01L2924/0002H01L2924/00H01L21/8234H01L29/10
Inventor 安东尼·J·洛赫特费尔德马修·T·柯里程志渊詹姆斯·菲奥里扎
Owner AMBERWAVE SYST