Through hole etching method and through hole mask

A technology of through-hole etching and masking, which is used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve uniform thickness and facilitate control.
CN101295643BInactive Publication Date: 2010-05-19SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2010-05-19
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

A through hole etching method includes the following steps of: providing a through hole etching floor; forming a patterned slushing compound layer on the through hole etching floor; exposing a part ofthe through hole etching floor by the patterned slushing compound layer; depositing an auxiliary mask layer which covers the patterned slushing compound layer and the part of the through hole etchingfloor exposed by the patterned slushing compound layer; etching the auxiliary mask layer so as to form a through hole mask which comprises an auxiliary mask; etching the through hole etching floor bythe through hole mask so as to form the through hole; the through hole mask includes the slushing compound layer with a confirmed graph which exposes a part of the through hole etching floor; the auxiliary mask which covers the side wall of the slushing compound layer with a confirmed graph; the auxiliary mask is added based on the inherent through hole mask so as to reduce the graph size of thethrough hole mask under an inherent condition and be beneficial to forming a through hole with expanded size limitation by utilizing the mask.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a through hole etching method and a through hole mask. Background technique

[0002] With the continuous shrinking of the critical dimension of semiconductor devices, in order to form a resist layer pattern with a smaller critical dimension in the photolithography process, only using a shorter-wavelength exposure light source can no longer meet the actual needs. In recent years, the industry generally reduces the size of the pattern by adding some kind of processing after the resist layer pattern is formed. Specifically, in order to obtain via holes with smaller sizes, it is necessary to reduce the size of the via holes formed on the resist layer.

[0003] Usually, a melting process can be used to reduce the size of the via. The melting process is a process of forming a contact hole pattern on the resist layer and then heat-treating the semiconductor substra...

Claims

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