Process for producing semi-conductor coated substrate
A technology for semiconductors and substrates, which is applied in the manufacture of semiconductor/solid-state devices, devices for coating liquids on surfaces, coatings, etc., and can solve problems such as the adverse effects of semiconductor wafer functions and the integrity of semiconductor components
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[0017] The present invention generally relates to a method of making a substrate suitable for use in semiconductor processing, in which method the surface of the substrate is first roughened and finally a thin layer of a coating composition is applied, said composition being preferably Is a dielectric to provide a non-conductive surface suitable for further processing into substrate materials for semiconductor components.
[0018] The surface of the semiconductor material must first be roughened to remove surface material that would adversely affect the properties of the substrate material, which improves the adhesion of the surface and makes it suitable for use in the manufacture of wafers, etc. semiconductor components. The substrate material can be any material suitable for use in the semiconductor industry, such as quartz, ceramics, metal oxides (including alumina) and metals (eg aluminum). Quartz is a particularly useful substrate material because it is a dielectric and ...
Embodiment 1
[0029]A thin wafer substrate made of quartz with a layer of silicon dioxide (Sample 1) was bead blasted using silicon carbide to obtain a surface roughness of 180-220 microinches Ra at a cut length of 0.03 inches. The bead blasted wafers were then treated with 70% nitric acid at 33% v / v, 69% hydrofluoric acid at 33% v / v, and deionized water at 34% for 1-2 minutes.
[0030] The wafers thus treated are then rinsed in deionized water and placed in an ultrasonic cleaning vessel at >5.0 megohm-cm in deionized water at 75-90°F Sonicate at high temperature for 2 minutes. The wafer was then dried using 0.01 micron filtered nitrogen and baked at 250°F for 2 hours under a nitrogen atmosphere.
[0031] A coating composition having an alumina content of greater than 98% is applied to the wafer thus dried and baked to form a coating thickness of 0.002 inches on the surface of the wafer to produce a coating with sufficient adhesion to be subsequently prepared Particle displacement is at l...
Embodiment 2
[0033] Samples 2-18 were prepared in the same manner as Sample 1, except that the coating, coating thickness, and surface roughness of the wafer were changed, as shown in Table 1.
[0034] Table 1
[0035] Adhesive results
[0036] sample
paint
Coating Thickness (inches)
1
Aluminum oxide
0.002
A
2
Aluminum oxide
0.002
A
3
Aluminum oxide
0.002
A
4
Aluminum oxide
0.006
B
5
Aluminum oxide
0.006
B
6
Aluminum oxide
0.006
B
7
Aluminum oxide
0.010
C
8
Aluminum oxide
0.010
C
9
Aluminum oxide
0.010
C
10
Zirconia **
0.002
A
11
Zirconia
0.002
A
12
Zirconia
0.002
A
13
Zirconia
0.006
B
14
Zirconia
0.006
B
15
Zirconia
0.006
B
16 ...
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