Shower plate and plasma treatment apparatus using shower plate

Abstract

This invention provides a shower plate (31) for plasma treatment formed of a plurality of pipings. The shower plate comprises piping (31A3) comprising a porous material member (44), which is disposed along the piping and has a predetermined porosity to a raw material gas and is convexed to the outside, and a metallic member (41) which is disposed so as to face the porous material member (44) and, together with the porous material member (44), constitutes a raw material gas flow passage (43). According to the above constitution, a nozzle structure, which can release the raw material gas in a divergent form, can be realized.

Description

Technical field [0001] The present invention relates to a manufacturing apparatus for semiconductors and semiconductor-related devices, and in particular to a shower plate that can be used in a processing chamber of a plasma processing device and a plasma device using the shower plate. Background technique [0002] In each process of the manufacturing process of semiconductors and semiconductor-related devices, the process of forming oxide film, nitride film, and oxynitride film on the surface of the substrate by oxidation, nitridation, oxynitride, or CVD, and removal by etching The process of these films. In the case of mass-production of general-purpose DRAMs of the same type, these processes are carried out by processing equipment that implements unique processes. However, in the production of small-scale and multi-variety custom LSIs, etc., expensive processing equipment is installed in each process step Constrained by cost, there is a need for a processing device that can im...

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Problems solved by technology

[0008] However, in the existing shower plate, due to the structure of the nozzle, the flow velocity of the raw material gas is high, ranging from hundreds of m / s to several km / s, so it is difficult to carry out the gas flow pattern in the processing chamber. control

[0009] In addition, in the conventional shower plate, the ejected raw material gas is concentrated directly below the nozzle, and cannot diffuse to the surrounding area directly below the nozzle, so there is a difficulty in laterally diffusing the raw material gas when ejected.

[0010] In addition, the temperature of the shower plate in the lower stage rises due to the recombination of ions and electrons in the plasma. When the forming material has poor heat-receiving ability, mechanical deterioration and deformation will occur, or even if it is a material with strong heat-receiving ability, Also due to uneven temperature rise, there are defects such as bending and deformation

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