Radiation-sensitive resin composition
A resin composition and radiation-sensing technology, applied in optics, opto-mechanical equipment, instruments, etc., can solve the problem of not necessarily obtaining sufficient pattern shape and resolution, and achieve the effect of excellent resolution, sufficient depth of focus, and good pattern shape.
Inactive Publication Date: 2008-11-26
JSR CORPORATIOON
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Problems solved by technology
However, even if a resist using this resin is used, sufficient pattern shape and resolution may not be obtained
Method used
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Abstract
This invention provides a radiation-sensitive resin composition that is good in the shape of a pattern provided by a liquid immersion exposure method, is excellent in resolution and focal depth latitude, and is small in amount of eluate into a refractive liquid (immersion liquid) with which the composition has come into contact during liquid immersion exposure. The radiation-sensitive resin composition is used in the formation of a photoresist film by liquid immersion exposure lithography in which a radiation is applied in such a state that a liquid for liquid immersion exposure having a refractive index of more than 1.44 and less than 1.85 at a wavelength of 193 nm is interposed between a lens and a photoresist film. The radiation-sensitive resin composition comprises a resin and a radiation-sensitive acid generator. The resin comprises a repeating unit having a lactone structure, is insoluble or sparingly soluble in an alkali, and is rendered easily soluble in an alkali through the action of an acid.
Description
【Technical field】 The present invention relates to the radiation-sensitive resin composition for liquid immersion exposure used in the liquid immersion exposure method. A radiation-sensitive resin composition for liquid immersion exposure in which the amount of eluted matter in the liquid for liquid immersion exposure contacted during exposure is small. 【Background technique】 Recently, in the typical field of microfabrication for manufacturing integrated circuit elements, in order to obtain a higher degree of integration, it is necessary to use a lithographic etching technology capable of microfabrication to a level below 200nm. However, the previous lithographic etching process generally uses near-ultraviolet rays such as i-lines as radiation, and the near-ultraviolet rays are extremely difficult to perform microfabrication at the level of less than a quarter of a micron. Therefore, we started to study radiation with shorter wavelengths for microfabrication below 200nm. T...
Claims
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IPC IPC(8): G03F7/039G03F7/20H01L21/027
CPCG03F7/2041G03F7/0397G03F7/004G03F7/0045G03F7/0046
Inventor 中村敦王勇辻隆幸
Owner JSR CORPORATIOON