Unlock instant, AI-driven research and patent intelligence for your innovation.

High speed modulation semiconductor laser

A semiconductor and laser technology, applied in the field of optoelectronic devices, can solve the problems of small extinction, high cost and existence, and achieve the effects of easy integration, convenient production and simple structure

Inactive Publication Date: 2010-06-23
ZHEJIANG UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the direct modulation method, this external modulator method has greatly improved the modulation rate, but this method still has some shortcomings: the modulator is separated from the laser, it is difficult to achieve monolithic integration, and there is a certain chirp Chirp, it is difficult to meet the higher modulation rate requirements, and the extinction ratio is small, and there is also the problem of high cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High speed modulation semiconductor laser
  • High speed modulation semiconductor laser
  • High speed modulation semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] refer to figure 1 A high-speed modulation semiconductor laser has a resonant cavity 1 and a bow-shaped optical waveguide 2. The resonant cavity 1 is located on the concave side of the bow-shaped optical waveguide 2, and two coupling regions 3 are formed at A and B where the distance between the resonant cavity 1 and the bow-shaped optical waveguide 2 is the closest. , 4, the resonant cavity 1 has a gain region 1a for generating gain, a phase tuning region 1b, and a separation region 1c between the gain region 1a and the phase region 1b, and the arcuate optical waveguide 2 between the two coupling regions 3 and 4 has A modulation area 2b that loads a modulation signal and modulates the absorption coefficient or gain coefficient or phase, and the port 2a of the bow-shaped optical waveguide 2 emits laser light that changes with the modulation signal.

[0019] figure 2 The specific structure shown is in figure 1 A three-port power divider 5 is connected to the arcuate op...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-speed modulation semiconductor laser, which comprises a resonant cavity and an arched optical waveguide, wherein the resonant cavity is positioned on the concave side of the arched optical waveguide and forms two coupled zones with the arched optical waveguide; the resonant cavity is provided with a gain region generating the gain, a phase tuning region and a separated region positioned between the gain region and a phase region; the arched optical waveguide positioned between two coupled zones is provided with a modulation region for loading a modulation signaland modulating an absorption coefficient, a gain coefficient or a phase. A certain constant current is loaded in the phase tuning region; the phase fine tuning is realized by utilizing electro-effect, so as to ensure that the phase of the arched optical waveguide is matched with the phase of the resonant cavity; a modulation signal is led into the modulation region of the arched waveguide to change the threshold value of laser oscillation, thereby achieving high-speed modulation. The high-speed modulation semiconductor laser has the advantages of low threshold value and low frequency chirp; furthermore, the structure is simple, the manufacture is convenient, and the integration is easy.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a high-speed modulation semiconductor laser, which belongs to the field of optoelectronic devices. Background technique [0002] In recent years, with the rapid development of the Internet and information interaction, people have put forward high-speed and large-bandwidth requirements for optical communication network data transmission. To achieve high speed (such as greater than 40Gb / s), it is necessary to develop high-speed modulated lasers. At first, people obtained a certain modulation rate by directly modulating the laser injection current. This is the easiest method, but there is an inherent modulation rate limitation due to the chirp. Since then, people have achieved high-speed modulation of a continuous output laser by means of an external modulator. Compared with the direct modulation method, this external modulator method has greatly improved the modulation rate, but this met...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/10H01S5/20H01S5/06H01S5/026
Inventor 戴道锌
Owner ZHEJIANG UNIV