Method for calibrating optical approach correcting model based on multi-photoresist active diffusion length

An optical proximity correction, photoresist model technology, applied in microlithography exposure equipment, originals for optomechanical processing, optics, etc. One-dimensional graphics and two-dimensional graphics are well calibrated to achieve good calibration, reduce calibration errors, and improve accuracy.

Active Publication Date: 2009-01-21
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

Figure 3 to Figure 5 is the calibration result of the classic optical proximity correction model, the vertical axis is the simulation error, and the horizontal axis is the graphic size. From the perspective of the entire error distribution, it is difficult to calibrate the one-dimensional and two-dimensional graphics well at the same time. The reason is A single photoresist effective diffusion length is used in the calibration process, and physically, the photoresist effective diffusion length varies from pattern to pattern, especially between 1D and 2D patterns, 2D patterns because photoacid from several Direction diffuses at the same time, so it has a larger effective diffusion length of the photoresist than the one-dimensional pattern, so it is difficult to calibrate the one-dimensional pattern and the two-dimensional pattern at the same time

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  • Method for calibrating optical approach correcting model based on multi-photoresist active diffusion length
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  • Method for calibrating optical approach correcting model based on multi-photoresist active diffusion length

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[0024] The invention provides an optical proximity correction model calibration method based on the effective diffusion length of multiple photoresists. By separately processing the one-dimensional graphics and the two-dimensional graphics, the effective diffusion of the photoresist corresponding to the one-dimensional graphics and the two-dimensional graphics is used. The length can be well calibrated for one-dimensional graphics and two-dimensional graphics at the same time, reducing calibration errors and improving calibration accuracy.

[0025] Please refer to figure 2 , figure 2 It is a schematic flow chart of a specific embodiment of the present invention, including the following steps: Execute step S21, calibration data measurement, the calibration data refers to a series of critical dimension (CD) measurement values ​​of typical structures, namely Figure 9 to Figure 14 test structure; execute step S22, use one-dimensional graphic data to calibrate the optical model...

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Abstract

An optical adjointing correction mode calibration method based on multi photo resist effective diffusion length comprises: measuring calibration data, using one-dimension diagram data calibration model to judge if the diagram is a one-dimension diagram or a two-dimension diagram, when it is a one-dimension diagram, using a one-dimension diagram data calibration photo resist model, and when it is a two-dimension diagram, using a two-dimension data calibration two-dimension photo resist model to judge if the sampling point simulation error is in a preset range, checking and outputting models. The invention respectively processes one-dimension diagram and two-dimension diagram, and uses the effective diffusion length according to actual diagrams, to reduce calibration error and improve calibration accuracy.

Description

technical field [0001] The invention relates to an optical proximity correction model calibration method, and in particular to an optical proximity correction model calibration method based on the effective diffusion length of multiple photoresists. Background technique [0002] Generally speaking, the lithography model always tries to describe each physical phenomenon of the lithography process as accurately as possible, but in many cases, due to the consideration of the calculation time of the whole chip, the optical proximity correction model (OPC) tool usually adopts semi-empirical The Diffuse Optical Imaging (DAIM) model is optimized to achieve faster calculation speed while ensuring a certain simulation accuracy. [0003] To simplify the overall calibration process, it is common practice in the industry to use the same resist effective diffusion length for all test patterns. On the other hand, with the continuous reduction of critical dimensions, the difference in the...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F7/20G03F1/36
Inventor 朱亮
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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