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Photomask, manufacturing method thereof and pattern transfer printing method

A manufacturing method and photomask technology, applied in the field of photomasks, can solve the problems of structural cost obstacle, impossible application, difficulty in exposure machine resolution and large light quantity, etc., and achieve the effect of improving resolution and simple manufacturing.

Active Publication Date: 2009-01-21
HOYA CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In fact, in order to obtain a large amount of light for large-area exposure, it is generally necessary to use a light source with a shorter wavelength band than the above-mentioned light source to improve resolution in an exposure machine for liquid crystal display device manufacturing that requires a light source with a wavelength band of about 365 to 436 nm. The method is impossible to apply, as long as it depends on the exposure light source, it is difficult to take into account the resolution of the exposure machine and the large amount of light
In addition, there are obstacles in terms of structure and cost to improve the resolution only through the design of the optical system of the exposure machine (for example, a high NA (aperture number) optical system is suitable)

Method used

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  • Photomask, manufacturing method thereof and pattern transfer printing method
  • Photomask, manufacturing method thereof and pattern transfer printing method
  • Photomask, manufacturing method thereof and pattern transfer printing method

Examples

Experimental program
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Embodiment

[0078] Hereinafter, the present invention will be further specifically described through examples.

[0079] A synthetic quartz substrate was used as a transparent substrate, and a semitransparent film made of a MoSi compound was formed with a predetermined film thickness on the transparent substrate by a sputtering method. This semi-transmissive film has a transmittance of 50% in the g-line within the exposure light (wavelength range of 365 nm to 436 nm) of the exposure machine used for pattern transfer described later (assuming that the transmission of the exposure light of the transparent substrate rate is 100%) to set the film thickness. In this case, the phase difference of the exposure light transmitted through the portion where the light semitransmissive film is formed relative to the exposure light transmitted through the transparent substrate is less than 60 degrees. Then, a positive photoresist is coated on the semitransparent film to prepare a photomask.

[0080] O...

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PUM

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Abstract

The invention provides a photomask comprising a transparent part and a semitransparent part. The demanded pattern is formed through the semitransparent film formed by the patterns formed thereon; and the transfer printing pattern with the line width below 3mum is formed on the transfer printed body by the exposal through the photomask. The photomask comprises patterns constructed by the transparent part and the semitransparent part while at least one of the transparent part and the semitransparent part comprises a part whose line width below 3mum.

Description

technical field [0001] The present invention relates to a photomask used in the manufacture of a liquid crystal display (Liquid Crystal Display: hereinafter referred to as LCD), and more particularly to a large photomask suitable for use in the manufacture of a thin film transistor substrate used in the manufacture of a thin film transistor liquid crystal display device (For example, one side is 300mm or more) and its manufacturing method and pattern transfer method using the photomask. Background technique [0002] Currently, in the field of LCD, a liquid crystal display device (Thin Film Transistor Liquid Crystal Display: hereinafter referred to as TFT-LCD) having a thin film transistor (Thin Film Transistor: hereinafter referred to as TFT) is compared with a CRT (cathode ray tube) due to Due to the advantages of being easy to make thin and low power consumption, commercialization is rapidly advancing. TFT-LCD has a TFT substrate, which is a structure in which TFTs are ar...

Claims

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Application Information

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IPC IPC(8): G03F1/14G03F1/00G03F7/00G03F1/28G03F1/54G03F7/20
CPCG03F1/32
Inventor 佐野道明
Owner HOYA CORP
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