Electrostatic induction device with multi-groove structure and preparation method thereof
A technology of electrostatic induction and devices, applied in the field of multi-slot structure electrostatic induction devices and its preparation, to achieve the effects of easy promotion, reduction of leakage current, and solution of protection problems
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Embodiment 1
[0028] The first step of photolithography: use L5 photolithography plate, the gate electrode pit, mesa groove and partition groove are etched simultaneously, the etching depth is subject to the gate electrode pit reaching the standard, and the etching will be terminated after reaching the standard; the second step of photolithography: With the L6 photolithography plate, the gate electrode pits that have reached the standard are covered (masked) by the photoresist without being etched, and the mesa groove and the partition groove are etched simultaneously for the second time. That is, the etching is terminated; the third step of photolithography: use the L7 photolithography plate, the gate electrode pit and the mesa groove that have reached the standard are covered by the photoresist and are not corroded, and only the isolation groove is etched for the third time until it reaches the standard. until the depth is reached.
[0029] In this embodiment, the height of the gate body ...
Embodiment 2
[0032] The first step of photolithography: using L7 photolithography plate, the isolation groove is etched; the second step of photolithography: using L6 photolithography plate, the second simultaneous etching of the mesa groove and the isolation groove; the third step of photolithography: using L5 In the photolithography version, the partition groove is etched to the standard depth for the third time, the mesa groove is etched to the standard depth for the second time, and the gate electrode pit is etched synchronously until the depth reaches the standard.
[0033] In this embodiment, the height of the gate body is 6 μm, the height of the boron-concentrated region is 8 μm, and n - The height of the high resistance layer is 12 μm, the gate electrode pit is 12.5 μm, the mesa groove is 25.5 μm, and the isolation groove is 40 μm.
[0034] V GS(K) It is 120 volts, and the I-V characteristics are normal.
Embodiment 3
[0036] The preparation method is the same as in Example 1.
[0037] In this embodiment, the height of the gate body is 6 μm, the height of the boron-concentrated region is 8 μm, and n - The height of the high resistance layer is 12 μm, the gate electrode pit is 13.5 μm, the mesa groove is 22 μm, and the isolation groove is 45 μm.
[0038] V GS(K) It is 90 volts, and the I-V characteristics are normal.
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