Target material for preparing TFT LCD electrode film and target material and electrode film preparation method

An electrode film and target technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of difficult purification and high price of AlNd, and meet the requirements of low resistivity and high thermal stability, thermal stability The effect of improving the performance and reducing the manufacturing cost

Inactive Publication Date: 2009-03-18
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to address the defects of the high price and difficult purification of AlNd in the prior art, and use abundant Fe, Ti or Ta to replace the scarce and high-priced Nd, that is, to provide suitable Al-Fe alloys, Al-Ti alloys or Al alloys. -Ta alloy to replace the AlNd target, and use the alloy target to prepare electrode films in semiconductor devices

Method used

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  • Target material for preparing TFT LCD electrode film and target material and electrode film preparation method
  • Target material for preparing TFT LCD electrode film and target material and electrode film preparation method
  • Target material for preparing TFT LCD electrode film and target material and electrode film preparation method

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preparation example Construction

[0037] The method for preparing the electrode film provided by the present invention is to deposit the electrode film on a substrate or other medium by a DC magnetron sputtering Al-Fe, Al-Ti or Al-Ta alloy target material.

[0038] The method for preparing the electrode film provided by the present invention can also be modified according to the requirements of the electrode film. Firstly, deposit a layer of refractory metal on a substrate or other medium, and then use DC magnetron sputtering Al-Fe, Al-Ti or Al-Ta The alloy target deposits a layer of Al-Fe, Al-Ti or Al-Ta alloy as a conductive layer to form a two-layer structure electrode film; or alternatively, first deposit a layer of refractory metal on the substrate or other medium, and then use direct current Magnetron sputtering Al-Fe, Al-Ti or Al-Ta alloy target deposits a layer of Al-Fe, Al-Ti or Al-Ta alloy as a conductive layer, and then deposits a layer of refractory metal on the conductive layer film layer , The format...

specific Embodiment 1

[0045] After fully mixing Al, Te (or Ti, Ta) alloy powder with a purity of 99.99wt%, heat the alloy with an induction or resistance furnace to completely melt it, and spray the working gas (usually Ar or N2) through atomization The nozzle atomizes the molten alloy into small droplets and moves quickly to the cooled and rotating substrate at a certain speed under the drive of the airflow, and obtains a body with a certain density on the surface of the substrate (generally the density is about 95% of the theoretical density) . The green body is preliminarily shaped, and then subjected to hot isostatic pressing to densify, and then forged and mechanically processed into the final alloy target shape.

specific Embodiment 2

[0047] The fully mixed Al, Te (or Ti, Ta) alloy powder with a purity of 99.99wt% is used to heat the alloy with an induction or resistance furnace to completely melt it. After stirring and homogenization, the alloy liquid is heated to a certain temperature After condensing it to room temperature, take it out of the cavity, with or without forging, and then mechanically process the alloy target to the final size.

[0048] Specific Example 1 of Preparation Method of Electrode Film

[0049] On 0.5mm thick glass, a 400nm thick Al alloy film was deposited by DC magnetron sputtering AlFe (or AlTi, AlFeTa) binary composite target. During the preparation process of the composite target, the content of alloying elements is controlled to be 0.5at%-3at%. The prepared film was annealed at 100°C, 200°C, 300°C, and 400°C and then cooled to room temperature, and its resistivity was measured by the 4-point method. Then measure its hillock density. Use the ICP method to measure the composition of ...

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PUM

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Abstract

The invention provides a target for preparing a TFT LCD active matrix electrode membrane, wherein the target is Al-Ta alloy, Al-Ti alloy or Al-Fe alloy; the content of alloying element of the target is 1at percent to 3at percent. The invention also discloses a method for preparing the target, which comprises the steps of: heating and completely melting the fully mixed Al-Ti, Al-Fe or Al-Ta alloy powder, atomizing the molten alloy frog into droplets by spraying working gas from an atomizing nozzle and rapidly driving the droplets towards a cooled and rotating substrate by airflow at a certain speed and obtaining a blank with certain density on the substrate surface; or heating and completely melting the fully mixed Al-Fe, Al-Ti or Al-Ta alloy powder, and pouring the uniformly stirred alloy liquid into a cavity preheated to a certain temperature to condense and form the alloy liquid. The manufacturing cost of the target and the electrode membrane can be reduced by using resourceful Fe, Ti or Ta to replace the scarce Nd with high price.

Description

Technical field [0001] The present invention relates to a target used in the preparation of electrodes of a semiconductor device and a method for manufacturing electrodes using the target, in particular to a target used in the preparation of active matrix electrodes of thin film transistor liquid crystal displays (hereinafter referred to as TFT LCD) and the use of the target to manufacture electrodes Methods. Background technique [0002] The current development trend of liquid crystal displays (hereinafter referred to as TFT LCDs) towards large size and high definition requires metal electrode films with very low resistivity as gates and source and drain electrodes. For example, for a TFT LCD larger than 10 inches, the resistivity of the electrode needs to be less than 20 μΩcm. At the same time, the substrate in the preparation of large-scale integrated circuits is no longer sufficient to provide enough area to deposit the interconnect lines required by the IC. Therefore, multi-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/35B22D21/00B22D19/00C23C14/58
Inventor 薛建设梁珂徐宇博
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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