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Substrate processing method

A substrate processing method and substrate technology, which are applied to the original parts, optics, and instruments used for photomechanical processing, can solve the problems of inability to maintain stable etching characteristics of phosphoric acid aqueous solution, long downtime, etc., and achieve long-term stable etching speed. Significantly increased effect

Active Publication Date: 2011-07-27
DAINIPPON SCREEN MTG CO LTD
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Problems solved by technology

[0006] However, this method has the problem that the down time of the device is too long
Therefore, a method of adding an additive containing siloxane to the phosphoric acid aqueous solution in advance has also been conceived, but there is a problem that the etching characteristics of the phosphoric acid aqueous solution cannot be stabilized due to decomposition or deterioration of the additive.

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no. 1 approach

[0039] figure 1It is a figure which shows the overall schematic structure of the substrate processing apparatus of this invention. This substrate processing apparatus 1 is a wet etching processing apparatus for immersing a substrate W formed with a silicon oxide film and a silicon nitride film in an aqueous phosphoric acid solution, and selectively etching the silicon nitride film. Processing device. The substrate processing apparatus 1 has: a immersion treatment tank 10, which stores a phosphoric acid aqueous solution, and performs etching treatment; a circulation path 20, which circulates the phosphoric acid aqueous solution to the immersion treatment tank 10; Additives are put into the aqueous solution; the collecting agent feeding mechanism 40 is used to put the collecting agent into the phosphoric acid aqueous solution in the immersion treatment tank 10 .

[0040] The immersion treatment tank 10 has a two-layer tank structure composed of an inner tank 11 that stores an ...

no. 2 approach

[0074] Next, a second embodiment of the present invention will be described. The structure of the substrate processing apparatus 1 of the second embodiment is completely the same as that of the substrate processing apparatus 1 of the first embodiment. The difference between the second embodiment and the first embodiment lies in the timing of injecting the trapping agent. In the first embodiment, the trapping agent is injected every time the substrate group consisting of a predetermined number of substrates W is etched, but in the second embodiment, based on the concentration of siloxane measured by the concentration meter 24 Concentration, into the collector.

[0075] In the second embodiment, in order to increase the etching selectivity of the silicon nitride film, an additive containing an aqueous solution of hexafluorosilicate is initially injected, and the control unit 60 controls the additive input mechanism 30 to inject it sequentially at predetermined intervals. By ad...

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Abstract

The present inveniton relates to a substrate processing apparatus for maintaning etching property of phosphoric acid solution at a predetermined level for a long time. An additive containing a hexafluorosilicic acid solution (H2SiF6+H2O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath (10) from an additive input mechanism (30). Further, a trap agent containing a fluoroboric acid solution (HBF4+H2O) is inputted into the phosphoric acid solution from a trap agent input mechanism (40). F- which accelerates etching of a silicon nitride film isadded as appropriate by sequentially inputting the additive and siloxane which increases by the sequential input is etched with hydrofluoric acid generated by decomposition of the fluoroboric acid, to thereby suppress a significant increase in the concentration of siloxane. This makes it possible to maintain respective initial etching rates of the silicon nitride film and a silicon oxide film.

Description

technical field [0001] The present invention relates to a substrate processing apparatus for processing semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for photomasks, substrates for optical discs, etc. (hereinafter, only (referred to as a "substrate") is immersed in an aqueous phosphoric acid solution and selectively etches the silicon nitride film. Background technique [0002] In the manufacturing process of semiconductor devices, etching treatment is an important process for forming patterns. In particular, with the improvement in performance and integration of semiconductor devices in recent years, it is necessary to perform the following treatment. Silicon nitride film (Si 3 N 4 film) and silicon oxide film (SiO 2 film), the process of selectively etching and removing the silicon nitride film while leaving the silicon oxide film. As a method of selectively etching a silicon nitride film in this way, it is known to use a h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311G02F1/1333G03F1/00G11B7/26H01L21/306H01L21/308
CPCH01L21/31111H01L21/67086
Inventor 清濑浩巳
Owner DAINIPPON SCREEN MTG CO LTD
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