Bonded structure and production method thereof
A technology for connecting structures and manufacturing methods, applied in semiconductor/solid-state device manufacturing, microstructure technology, microstructure devices, etc., can solve problems such as inability to ensure connection area, decreased bonding performance, and difficulty in plastic deformation, and achieve reduction in size. Average roughness, increased connection area, improved bonding effect
Inactive Publication Date: 2009-04-29
PANASONIC CORP
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Problems solved by technology
However, in this case, since polysilicon has the property of being difficult to plastically deform unlike the easily plastically deformable aluminum described in the above-mentioned Patent Document 1, as Figure 5 As shown, if the unevenness of the surface of the polysilicon film bonding pad 1 is large, voids 3 will be generated at the connection part when the aluminum-based wire 2 is connected, so that a sufficient connection area cannot be secured, and the bonding performance may decrease.
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[0019] Next, the bonded structure and its manufacturing method according to the embodiment of the present invention will be described with reference to the drawings.
[0020] figure 1 and figure 2 It is a cross-sectional view showing a bonded structure according to an embodiment of the present invention and an enlarged view showing the surface of a polysilicon film bonding pad.
[0021] Such as figure 1 As shown, the structure of the connection structure involved in the embodiment of the present invention is: SiO is formed on Si4 2 Film 5, on SiO 2 A BPSG (borophosphosilicate glass) film 6 is formed on the film 5, a SiN film 7 is formed on the BPSG film, a polysilicon film bonding pad 1 is formed on the SiN film 7, and an aluminum-based metal is connected to the polysilicon film bonding pad 1 Silk 2. in addition, figure 2 The 8 in represents the average roughness of the pad surface.
[0022] This bonded structure was manufactured as follows.
[0023] Form SiO on Si...
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Abstract
A junction structure and a method of manufacturing the same are provided which can achieve stable wire bonding between a Poly-Si film bonding pad and an Al wire. The junction structure is made up of a SiO2 film 5 formed on Si 4, a BPSG film 6 formed on the SiO2 film 5, a SiN film 7 formed on the BPSG film 6, a Poly-Si film bonding pad 1 formed on the SiN film 7, and an Al wire 2 bonded on the Poly-Si film bonding pad 1. A pad surface average roughness 8 of the Poly-Si film bonding pad 1 can be reduced. Thus it is possible to reduce gaps between bonding surfaces of the Al wire 2 and the Poly-Si film bonding pad 1 and increase a bonding area, thereby improving wire bonding characteristics.
Description
technical field [0001] The present invention relates to a connection structure of a polysilicon (Poly-Si) film and an aluminum-based metal wire and a manufacturing method thereof. Background technique [0002] In recent years, MEMS (Micro-Electro-Mechanical Systems) technology, which uses semiconductor microfabrication technology to form electromechanical parts, has attracted attention, and the development of MEMS technology has become increasingly active in various fields such as the mechanical field, electronic field, communication field, and medical field. [0003] In MEMS technology, hydrofluoric acid is usually used to etch silicon into the desired shape. At this time, as a method of obtaining electrical conduction between the input and output signals outside the device and inside the device, since it is impossible to use materials that will be etched by hydrofluoric acid chemical solutions as materials for conducting parts, hydrofluoric acid is used. After chemical et...
Claims
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IPC IPC(8): H01L23/488H01L23/485H01L21/60
CPCH01L2924/01015H01L2224/45124H01L2224/05557H01L2924/01082H01L2924/01004H01L2224/0569H01L2224/48699H01L2224/056B81C1/00095H01L2224/02166H01L2224/4847H01L2224/05556H01L2924/01013H01L24/48H01L24/03H01L2224/48599H01L2924/05042H01L2224/4807H01L2924/01079H01L24/05H01L24/45H01L2224/04042H01L2224/48458H01L2924/01005H01L2924/01033H01L2924/01006H01L2924/01078H01L2924/01014H01L2224/45144H01L2924/01051H01L2924/1461H01L2924/00011H01L2924/00014H01L2224/4879H01L2924/00H01L2224/4869
Inventor 水谷笃人
Owner PANASONIC CORP