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Production process for golden electrode for LED

A technology of light-emitting diodes and gold electrodes, which is applied in the field of preparation of gold electrodes for light-emitting diodes, to achieve the effects of stable storage, high purity, and no pinhole cracks

Inactive Publication Date: 2010-09-22
ZHEJIANG INVENLUX TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] If the chemical reduction gold plating process can be applied to the preparation of gold electrodes for light-emitting diodes, it will be able to solve the current problems in the preparation of gold electrodes for light-emitting diodes, and there is no relevant report yet.

Method used

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  • Production process for golden electrode for LED
  • Production process for golden electrode for LED
  • Production process for golden electrode for LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] (2) On the transparent electrode layer 5, the N-type layer 2, the metal layer with ohmic contact and a layer of gold 8 with a thickness of 300 angstroms are evaporated successively, as image 3 Shown; remove excess photoresist and metal by Lift-off, then clean the wafer with acetone and isopropanone ultrasonic vibration to remove residual photoresist and organic matter;

[0044] (3) Under the conditions of 5g / L of gold sodium sulfite (calculated as gold), the chemical gold plating solution component, the pH value is 7.5, and the temperature is 50°C, the deposition thickness on the surface of the evaporated gold layer by reduction reaction is 10000 EGG 9, such as Figure 4 shown;

[0045] (4) Rinse and clean the wafer alternately with hot and cold deionized water; in an alloy furnace fed with 10 sccm nitrogen, the temperature is 225° C., and the wafer for which the gold electrode is prepared is subjected to heat treatment for 15 min.

[0046] The gold electrode prepare...

Embodiment 2

[0050] (2) On the transparent electrode layer 5, the N-type layer 2, the metal layer with ohmic contact and a layer of gold 8 with a thickness of 500 angstroms are evaporated successively, as image 3Shown; remove excess photoresist and metal by Lift-off, then clean the wafer with acetone and isopropanone ultrasonic vibration to remove residual photoresist and organic matter;

[0051] (3) Under the conditions of 5 g / L of sodium gold sulfite (calculated as gold) in the electroless gold plating solution component, the pH value is 7.8, and the temperature is 60° C., the deposition thickness of the evaporated gold layer is 15,000 μm by reduction reaction. Angstrom 9, such as Figure 4 shown;

[0052] (4) Rinse and clean the wafer alternately with hot and cold deionized water; in an alloy furnace fed with 10 sccm nitrogen gas, the temperature is 250° C., and the wafer for which the gold electrode is prepared is subjected to heat treatment for 15 min.

[0053] The gold electrode p...

Embodiment 3

[0057] (2) On the transparent electrode layer 5, the N-type layer 2, the metal layer with ohmic contact and a layer of gold 8 with a thickness of 400 angstroms are evaporated successively, as Figure 6 Shown; remove excess photoresist and metal by Lift-off, then clean the wafer with acetone and isopropanone ultrasonic vibration to remove residual photoresist and organic matter;

[0058] (3) Under the conditions of 5g / L gold sodium sulfite (calculated as gold), the chemical gold plating solution component, the pH value is 7.5, and the temperature is 55°C, the deposition thickness on the evaporated gold layer surface by reduction reaction is 10000 Angstrom 9, such as Figure 7 as shown,

[0059] (4) Rinse and clean the wafer alternately with hot and cold deionized water; in an alloy furnace fed with 10 sccm nitrogen, the temperature is 225° C., and the wafer for which the gold electrode is prepared is subjected to heat treatment for 15 min.

[0060] The gold electrode prepared...

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Abstract

The invention discloses a light-emitting diode gold electrode preparation method, which comprises the following steps: firstly, an ohmic-contact metal layer and a thin gold layer undergo vapour-deposition successively, and then the chemical reduction gold plating is adopted to precipitate a gold layer with a required thickness on the surface of the thin gold layer undergoing the vapour-deposition, so that the preparation of the light-emitting diode gold electrode is completed. The method adopts the chemical reduction gold plating method to prepare the gold electrode, so as to save significantly the consumption of gold, and lower the cost of raw material. The preparation method is simple in operation, and the storage of plating solution is stable. The prepared gold electrode has the advantages of high purity, smooth and bright surface, compactness and uniformity, has no pin-hole cracks or other defects, and is firmly combined.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a gold electrode of a light-emitting diode. Background technique [0002] Light-emitting diode (LED) is a light-emitting device that converts electrical energy into light energy. It is widely used in many fields such as indication, display, decoration, lighting, etc., and has become an indispensable part of our life. [0003] The main material of existing light-emitting diode electrodes is gold, which is generally produced by vacuum evaporation or sputtering. However, these preparation methods cannot accurately control the deposition position of gold, so that most of the gold is deposited in the non-electrode area, resulting in low utilization rate of gold, wasting a lot of expensive raw materials, thereby increasing the production cost of light-emitting diodes. [0004] Electroless gold plating can be divided into two types: chemical replacement me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/36
Inventor 陈国聪王孟源黄少华雷秀铮
Owner ZHEJIANG INVENLUX TECH
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