Pixel construction and manufacturing method thereof
A technology of pixel structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., to achieve the effect of good electrical quality
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[0049] Figure 2A to Figure 2J A flow cross-sectional view of a manufacturing method of a pixel structure according to an embodiment of the present invention is shown. Please refer first Figure 2A The manufacturing method of the pixel structure of this embodiment includes the following steps. First, a gate 220 and a gate insulating layer 230 are sequentially formed on the substrate 210, and the gate insulating layer 220 covers the gate 220. The method of forming the gate 220 is, for example, a physical vapor deposition process or a chemical vapor deposition process to form a metal material layer (not shown) on the substrate 210. Then, a patterning process is performed on the metal material layer to form the gate 220, wherein the patterning process includes a photolithography process and an etching process. In fact, the gate 220 may also be composed of multiple layers of metal. In addition, the method of forming the gate insulating layer 230 is, for example, a chemical vapor ...
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