Manufacturing method of thin film transistor and manufacturing method of array substrate

Abstract

The invention provides a manufacturing method of a thin film transistor. A method for forming a back channel comprises the following steps: S21, laminating and manufacturing an active material film, asource and drain electrode material film and a photoresist material film on a gate insulation layer so as to obtain an etched substrate; S22, carrying out primary wet etching, primary dry etching andphotoresist burning and secondary wet etching on the etched substrate in sequence so as to form a source electrode, a drain electrode and a photoresist layer; S23, etching the active material film byadopting a first etching gas so as to form the back channel; and S24, removing the photoresist layer by adopting a second etching gas so as to obtain the thin film transistor. According to the manufacturing method, a copper stripping solution can be avoided from being used when the back channel is etched, and the compositions and using amounts of various etching gases are reasonably matched, so that the problems of copper ion diffusion and pollution of other impurity ions in the copper stripping solution in the prior art are further avoided while back channel etching and photoresist removal are completed. The invention also provides application of the manufacturing method in an array substrate.

Description

technical field [0001] The invention belongs to the technical field of liquid crystal display manufacturing, and specifically relates to a method for manufacturing a thin film transistor and a method for manufacturing an array substrate based on the method for manufacturing the thin film transistor. Background technique [0002] With the continuous development of display technology, thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT-LCD) occupies a dominant position in the field of flat panel display due to its advantages of small size, low power consumption, and no radiation. As people's pursuit of display resolution and picture refresh rate is getting higher and higher, the development of new materials and new processes is imminent. [0003] At present, the traditional conductive layer metal materials are mainly aluminum and molybdenum. The advantages of aluminum and molybdenum are that the film forming process is simple, the adhe...

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Problems solved by technology

[0006] In order to solve the problems existing in the above-mentioned prior art, the present invention provides a method for manufacturing a thin film transistor, which can avoid the use of copper stripping solution when etching the back channel, and instead use a combination of a variety of etching gases. Composition, dosage, etc., while completing the back channel etching and photoresist removal, it also avoids the copper ion diffusion in the prior art and the pollution of other impurity ions in the copper stripping solution

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