Apparatus and method for exploiting reverse short channel effects in transistor devices

A short-channel effect, transistor technology, applied in transistors, amplifiers with semiconductor devices/discharge tubes, semiconductor/solid-state device manufacturing, etc. Sensitivity, cost-increasing effect
CN101467255AInactive Publication Date: 2009-06-24TELEFON AB LM ERICSSON (PUBL)
0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
TELEFON AB LM ERICSSON (PUBL)
Publication Date
2009-06-24
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A method of implementing a transistor circuit comprises coupling first and second transistors in parallel, wherein the first transistor has a channel length corresponding to a peak in the transistor's voltage threshold curve arising from reverse short channel effects, and the second transistor has a longer channel length and, therefore, a lower threshold voltage. Exploiting reverse short channel effects in this manner enables the implementation of 'composite' transistor circuits that exhibit improved linearity.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates generally to transistor devices, and more particularly to exploiting the reverse short channel effect in such devices. Background technique

[0002] In most communication circuits, linear signal amplification represents a core enabling function. For example, wireless communication transceivers employ linear signal amplification at various stages in their transmit and receive signal processing paths. More particularly, radio frequency (RF) based communication systems rely on linear amplification in frequency mixing circuits, low noise amplification circuits, power amplification circuits, etc., to maintain signal fidelity and limit unwanted harmonic frequency generation. However, the non-linear current-voltage (IV) characteristics of semiconductor transistors, such as bipolar or MOS transistors, represent a fundamental source of signal non-linearity in communication circuits, which is heavily dependent on the use of these t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More