Apparatus and method for exploiting reverse short channel effects in transistor devices

Abstract

A method of implementing a transistor circuit comprises coupling first and second transistors in parallel, wherein the first transistor has a channel length corresponding to a peak in the transistor's voltage threshold curve arising from reverse short channel effects, and the second transistor has a longer channel length and, therefore, a lower threshold voltage. Exploiting reverse short channel effects in this manner enables the implementation of "composite" transistor circuits that exhibit improved linearity.

Description

technical field [0001] The present invention relates generally to transistor devices, and more particularly to exploiting the reverse short channel effect in such devices. Background technique [0002] In most communication circuits, linear signal amplification represents a core enabling function. For example, wireless communication transceivers employ linear signal amplification at various stages in their transmit and receive signal processing paths. More particularly, radio frequency (RF) based communication systems rely on linear amplification in frequency mixing circuits, low noise amplification circuits, power amplification circuits, etc., to maintain signal fidelity and limit unwanted harmonic frequency generation. However, the non-linear current-voltage (IV) characteristics of semiconductor transistors, such as bipolar or MOS transistors, represent a fundamental source of signal non-linearity in communication circuits, which is heavily dependent on the use of these t...

AI Technical Summary

Problems solved by technology

[0009] The use of short-channel transistors is further complicated by the so-called "reverse short-channel effect" (RSCE)

Images