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Deposition of metal films on diffusion layers by atomic layer deposition and organometallic precursor complexes therefor

An organic metal and complex technology, applied in the direction of 1/11 group organic compounds without C-metal bonds, copper organic compounds, organic chemistry, etc. Problems such as depositing copper examples

Inactive Publication Date: 2009-07-01
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the documents describe the use of the aforementioned precursors for the deposition of copper by ALD on barrier layers, they neither disclose examples showing the deposition of copper on barrier layers nor the quality of copper deposited on barrier layers

Method used

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  • Deposition of metal films on diffusion layers by atomic layer deposition and organometallic precursor complexes therefor
  • Deposition of metal films on diffusion layers by atomic layer deposition and organometallic precursor complexes therefor
  • Deposition of metal films on diffusion layers by atomic layer deposition and organometallic precursor complexes therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0091] The present invention will be explained in more detail with reference to the following examples, but it should be understood that the present invention is not limited to these examples.

[0092] Extensive first-principles calculations based on density-functional principles were performed to investigate copper deposition by ALD on tungsten nitride diffusion barriers and copper layers using known organometallic precursor compounds and new classes of organometallic compounds. The organometallic compounds studied and developed are sufficiently volatile that they can be easily released into the ALD chamber by conventional means.

[0093] Examples describing copper deposition using Cu(I) compounds

Embodiment 3

[0110] First-principle calculations were performed for a Cu(I) precursor with structure C shown below. The structure consists of 2 fused 5-membered rings with 10 trifluoromethyl groups dispersed around the structure.

[0111] Structure C

[0112]

[0113] It is a new compound that no one has used to deposit copper by CVD or ALD. Calculations show that this molecule is chemisorbed on the surface of a tungsten nitride barrier layer or WN(111) with a (111) preferred orientation. The adsorption energy was calculated to be -0.44 eV. The energy required to reduce the adsorbed copper complex was calculated to be -0.73 eV. Thus, this copper precursor is suitable for depositing copper by ALD on WN(111) surfaces.

[0114] Calculations show that this compound also exhibits strong chemisorption on the Cu(100) surface with an adsorption energy of −2.31 eV. The energy required to reduce the adsorbed copper complex was calculated to be -2.59 eV. Thus, this compound can be used to de...

Embodiment 6

[0132] First principles calculations were performed for a Cu(II) precursor with structure F shown below. The structure consists of two 6-membered rings in which four oxygen atoms are chelated to Cu atoms.

[0133] Structure F

[0134]

[0135] It is a new compound that no one has used to deposit copper by CVD or ALD.

[0136] Calculations show that this molecule is chemisorbed on the surface of a tungsten nitride barrier layer or WN(111) with a (111) preferred orientation. The adsorption energy was calculated to be -0.38 eV. The energy required for the reduction step was calculated to be -0.69 eV, which is exothermic rather than endothermic. Thus, this copper precursor is suitable for depositing copper by ALD on WN(111) surfaces.

[0137] Calculations show that this compound is strongly chemisorbed on the Cu(100) surface with an adsorption energy of −2.41 eV. The energy required for the reduction step was calculated to be -2.82 eV. Thus, this compound can be used to d...

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Abstract

Organometallic precursor complexes containing a metal and ligands containing electron withdrawing groups are disclosed. The complexes are adapted to undergo exothermic adsorption on a fully passivated diffusion barrier layer and on a metal layer deposited on the diffusion barrier layer and to undergo exothermic reduction on the diffusion barrier layer and the metal layer. The metal is preferably copper. Use of the complexes in atomic layer deposition is also disclosed.

Description

technical field [0001] The present invention relates to a method for depositing a metal on a diffusion barrier layer by atomic layer deposition and an organometallic precursor complex for use in the method. Background technique [0002] It has been three decades since the atomic layer deposition (ALD) technique was first developed to deposit display materials. It is itself a limited craft. It grows films by sequential deposition of atomic layers by means of a well-controlled pattern of surface reactions on various substrates. Specifically, the method includes two distinct steps for depositing metal on the surface - adsorption of metal precursors on the substrate surface without decomposition, followed by dissociation of the metal precursors by means of reducing gases. These two steps are repeated a plurality of times to form a metal film of a desired thickness atom by atom. Although ALD is a method that provides slow growth rates, it is becoming increasingly important to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F19/00C07F1/08C23C16/18
CPCC07F1/005Y10T428/31678C07F1/08C23C16/06C23C18/38
Inventor H·程D·加格P·奥尔德琼M·科比恩
Owner AIR PROD & CHEM INC