Electrode construction for enhancing photoelectric transforming efficiency of silicon solar cell

Abstract

The invention discloses an electrode structure for improving a crystal silicon solar battery photoelectric transformation efficiency characterized by arranging parallely set gate lines on a light interception face of the crystal silicon solar battery substrate, and arranging at least two solder joints between each gate line and the crystal solar battery substrate light interception face, wherein the gate lines are conductive gate lines. The invention cancels split-gate lines in a background technique, uses the solder points between the metal gate lines and the crystal solar battery substrate to gather light currents of the crystal silicon solar battery light interception face and guides the currents gathered by the solder points by using the metal gate lines. Because said structure, the invention not only reduces a lightproof area of the light interception face gate line of the crystal silicon solar battery, but also reduces a series resistance of the crystal silicon solar battery, thereby improving the conversion efficiency of the crystal silicon solar battery and facilitating the interconnect of multi-block single batteries.

Description

technical field [0001] The invention relates to a silicon solar cell, in particular to an electrode structure for improving the photoelectric conversion efficiency of a crystalline silicon solar cell. Background technique [0002] At present, the grid lines on the light-receiving surface of a typical crystalline silicon solar cell are composed of main grid lines and sub-grid lines. The main grid lines and fine grid lines are printed on the surface of the cell by screen printing technology. The current of the grid line outputs the power generated by the battery substrate. The gate line structure has the following disadvantages: [0003] 1. Due to the dense arrangement of sub-grid lines, the proportion of main and sub-grid lines blocking the light-receiving surface of crystalline silicon solar cells is relatively large, which reduces the light-receiving area of ​​crystalline silicon solar cells and affects the photoelectric conversion efficiency of the entire crystalline sili...

AI Technical Summary

Problems solved by technology

[0003] 1. Due to the dense arrangement of sub-grid lines, the proportion of main and sub-grid lines blocking the light-receiving surface of crystalline silicon solar cells is relatively large, which reduces the light-receiving area of ​​crystalline silicon solar cells and affects the photoelectric conversion efficiency of the entire crystalline silicon solar cells

[0004] 2. Due to the limitation of printing technology, the resistance of metal grid lines in the prior art is relatively high, resulting in a decrease in the photoelectric conversion efficiency of crystalline silicon solar cells

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