Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube
A vertical double-diffusion, semiconductor tube technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problems of small drift layer thickness, no longer suitable for super junction structure devices, and high concentration in the drift region, and achieve an ideal off state, The effect of increasing the number and shortening the area
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[0018] A super-junction longitudinal double-diffusion metal oxide semiconductor tube, comprising: an N-type doped silicon substrate that doubles as a drain region, an N-type doped silicon epitaxial layer 2, a cell region 3, and a cell region 3 arranged around the cell region 13 The terminal region 5 and the transition region 4 located between the primitive cell region 3 and the terminal region 5, the N-type doped silicon epitaxial layer 2 is provided on the N-type doped silicon substrate 1, the primitive cell region 3 and the terminal region 5 is set on the N-type doped silicon epitaxial layer 2, and the terminal region 5 of the transistor includes a first super junction structure and an N-type silicon doped semiconductor region 2 , Where the first super junction structure includes an N-type pillar 25 and a P-type pillar 26, in the N-type silicon doped semiconductor region 2 There is a horizontal P-type column 14 and a high-concentration N-type area 12 Wherein, the horizontal P-ty...
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