Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube

Abstract

The invention discloses an ultra-junction vertical double-diffused metal-oxide transistor which comprises an N-type doped silicon substrate, an N-type doped silicon epitaxial layer, a primitive cell area, a terminal area arranged on the periphery of the primitive cell area and a transition area which is positioned between the primitive cell area and the terminal area; the N-type doped silicon epitaxial layer is arranged on the N-type doped silicon substrate; the primitive cell area and the terminal area are arranged on the N-type doped silicon epitaxial layer; the terminal area of the transistor comprises a first ultra-junction structure and an N-type silicon doped semiconductor area, wherein the first ultra-junction structure comprises an N-type column and a P-type column; a lateral P-type column and an N-type area with high-concentration are arranged in the N-type silicon doped semiconductor area; an N-type thin layer with high-concentration is arranged on the surfaces of the first ultra-junction and the N-type silicon doped semiconductor area; and a field oxide layer is arranged on the N-type thin layer. The ultra-junction vertical double-diffused metal-oxide transistor is characterized in that: the lateral P-type column is arranged in the N-type silicon doped semiconductor area and the N-type thin layer with high-concentration is arranged on the surface of the terminal area of the transistor.

Description

Technical field: [0001] The present invention relates to a silicon-made high-voltage power metal oxide semiconductor device, more precisely, to a silicon-made high-voltage super-junction vertical double-diffused metal oxide semiconductor field-effect transistor (super junction VDMOS, namely super junction VDMOS, hereinafter referred to as for superjunction VDMOS). Background technique: [0002] At present, power devices are more and more widely used in daily life, production and other fields, especially power metal oxide semiconductor field effect transistors, because they have faster switching speed, smaller drive current, and wider safe operating area , so it has been favored by many researchers. Nowadays, power devices are developing rapidly in the direction of increasing operating voltage, increasing operating current, reducing on-resistance and integration. Among many power metal oxide semiconductor field effect transistor devices, especially in vertical power metal o...

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Problems solved by technology

[0003] For the terminal structure of traditional power devices, in addition to making field plate and other terminal structures on the surface of bulk silicon, a drift layer with a lower concentration is used inside the bulk silicon to ensure the withstand voltage level. However, due to the special principle of super-junction devices The concentration of the drift region is high, and the thickness of the drift layer is also small. The terminal structure of ordinary high-voltage power devices is no longer suitable for super-junction structure devices.

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