Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube
A vertical double-diffusion, semiconductor tube technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problems of small drift layer thickness, no longer suitable for super junction structure devices, and high concentration in the drift region, and achieve an ideal off state, The effect of increasing the number and shortening the area
Inactive Publication Date: 2009-08-19
SOUTHEAST UNIV
0 Cites 39 Cited by
AI-Extracted Technical Summary
Problems solved by technology
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreMethod used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreAbstract
The invention discloses an ultra-junction vertical double-diffused metal-oxide transistor which comprises an N-type doped silicon substrate, an N-type doped silicon epitaxial layer, a primitive cell area, a terminal area arranged on the periphery of the primitive cell area and a transition area which is positioned between the primitive cell area and the terminal area; the N-type doped silicon epitaxial layer is arranged on the N-type doped silicon substrate; the primitive cell area and the terminal area are arranged on the N-type doped silicon epitaxial layer; the terminal area of the transistor comprises a first ultra-junction structure and an N-type silicon doped semiconductor area, wherein the first ultra-junction structure comprises an N-type column and a P-type column; a lateral P-type column and an N-type area with high-concentration are arranged in the N-type silicon doped semiconductor area; an N-type thin layer with high-concentration is arranged on the surfaces of the first ultra-junction and the N-type silicon doped semiconductor area; and a field oxide layer is arranged on the N-type thin layer. The ultra-junction vertical double-diffused metal-oxide transistor is characterized in that: the lateral P-type column is arranged in the N-type silicon doped semiconductor area and the N-type thin layer with high-concentration is arranged on the surface of the terminal area of the transistor.
Application Domain
Technology Topic
Image
Examples
- Experimental program(1)
Example Embodiment
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM


Description & Claims & Application Information
We can also present the details of the Description, Claims and Application information to help users get a comprehensive understanding of the technical details of the patent, such as background art, summary of invention, brief description of drawings, description of embodiments, and other original content. On the other hand, users can also determine the specific scope of protection of the technology through the list of claims; as well as understand the changes in the life cycle of the technology with the presentation of the patent timeline. Login to view more.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Similar technology patents
Heat pipe with cross-section-variable upper header pipe
Owner:禹城京都新材料科技有限公司
Universal fixture in use for supersound cleaning
InactiveCN1562506AReduce areaImprove work efficiencyWork holdersCleaning using liquidsFixed frameBiomedical engineering
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Online detection fault-tolerance system of FPGA (Field programmable Gate Array) digital sequential circuit of SRAM (Static Random Access Memory) type and method
InactiveCN101930052AImprove system reliabilityReduce areaDigital circuit testingField-programmable object arrayField-programmable gate array
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
Generator-motor
InactiveUS20050258690A1Reduce control circuitReduce areaSynchronous generatorsSolid-state devicesDynamoEngineering
Owner:TOYOTA JIDOSHA KK
Package structure with antenna and manufacturing method thereof
ActiveCN102299142AReduce areaReduce design and manufacturing costsSemiconductor/solid-state device detailsSolid-state devicesIntegrated circuitEngineering
Owner:UNIVERSAL SCIENTIFIC INDUSTRIAL (SHANGHAI) CO LTD +1
Classification and recommendation of technical efficacy words
- Increase the area
- Reduce area
Preparation method of low-temperature selective catalytic reduction (SCR) catalyst by removing NOx from flue gas
ActiveCN102008956AIncrease the areaLarge hole volumeNitrous oxide captureDispersed particle separationComposite oxideCoprecipitation
Owner:GUODIAN SCI & TECH RES INST +1
Programmable logic device and semiconductor device
ActiveUS20130314124A1Increase the areaRun at high speedSolid-state devicesLogic circuits using elementary logic circuit componentsProgrammable logic deviceLogic element
Owner:SEMICON ENERGY LAB CO LTD
Vehicle door control apparatus and method for controlling vehicle door
InactiveUS20100076651A1Increase the areaProgramme controlDigital data processing detailsCar doorRotational axis
Owner:DENSO CORP +1