Method for manufacturing complex NEMS structure based on SOI material
A manufacturing method and complex technology, applied in the field of manufacturing complex NEMS structures, can solve the problems of difficult mass production, poor repeatability, and difficult processing technology, and achieve the effects of high processing precision and accurate processing positioning.
Active Publication Date: 2009-09-09
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Problems solved by technology
One is the approach from small to large (Bottom-up), using molecular-atom assembly technology to precisely form nanoscale molecular wires, molecular membranes and other functional molecules and atoms with certain properties with the help of internal forces. structure, and then integrate nanostructures and functional units into NEMS. This processing technology can realize the processing of many NEMS devices with complex structures. It is a technology commonly used in the field of nanomaterials, but this processing technology is difficult and repeatable. Poor, currently difficult to achieve mass production
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[0023] The present invention is described in further detail below in conjunction with accompanying drawing:
[0024] The present invention adopts a Top-down approach to process a NEMS structure on a thin-layer SOI (Silicon-On-Insulator, ie, silicon on an insulating substrate) material. Use the top silicon wafer as the NEMS structure layer, thin the top silicon wafer by thermal oxidation to control the thickness of the NEMS structure layer, use photolithography and sputtering methods to realize metal wiring on the top layer silicon wafer, and use electron beam lithography and dry etching The NEMS structure is realized on the top silicon wafer by etching technology, the buried silicon dioxide is used as the sacrificial layer, the silicon dioxide sacrificial layer is etched by HF, and the release of the NEMS structure is realized by the carbon dioxide supercritical extraction method. Specifically, it includes the following steps:
[0025] Material preparation: select thin-layer ...
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The invention discloses a method for manufacturing a complex NEMS structure based on SOI material. The method comprises the steps as follows: 1) a top layer silicon chip of the SOI material is oxidized by a thermal oxidization method to reduce the thickness of the silicon chip; 2) silicon dioxide at the areas corresponding to a bonding pad, a wiring and an electron beam alignment mark on the silicon dioxide is etched off by photoetching and a wet etching method; 3) a metal layer is generated by a magnetron sputtering method, and the bonding pad, the wiring and the electron beam alignment mark are peeled off; 4) a NEMS structure figure is transferred to the top layer silicon chip by electron beam etching and the wet etching method; 5) the silicon chip at the area corresponding to the NEMS structure figure is etched off by an inductive coupling plasma etching method to form the NEMS structure; and 6) a silicon dioxide sacrificial layer with the NEMS structure at the bottom and the SOI material at the top is eroded by HF, and the NEMS structure is released by a carbon dioxide supercritical extraction method. The invention has the characteristics of exact processing positioning, high processing precision and being capable of preparing in bulk repeatedly.
Description
technical field [0001] The invention relates to a manufacturing method of a NEMS structure, in particular to a manufacturing method of a complex NEMS structure based on SOI material. Background technique [0002] NEMS (nano-electro-mechanical-system, nano-electromechanical system) technology is a new concept proposed based on MEMS (micro-electro-mechanical-system, micro-electromechanical system) technology in the late 1990s. It is a kind of ultra-small electromechanical integrated system with the characteristics of nanotechnology in effect. Generally, it refers to devices and systems whose feature size is from sub-nanometer to hundreds of nanometers, and which are characterized by new effects (quantum effects, interface effects and nano-scale effects) produced by nanoscale structures. [0003] NEMS has many unique properties: (1) ultra-small mass: the effective mass of NEMS devices is within a gram (10 -18 g) magnitude; (2) ultra-high frequency: the mechanical resonance fr...
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IPC IPC(8): B82B3/00
Inventor 罗蓉杨拥军
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP