Method for manufacturing complex NEMS structure based on SOI material
A production method, wet etching technology, applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., to achieve the effect of high processing precision and accurate processing positioning
Active Publication Date: 2010-10-13
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Problems solved by technology
One is the approach from small to large (Bottom-up), using molecular-atom assembly technology to precisely form nanoscale molecular wires, molecular membranes and other functional molecules and atoms with certain properties with the help of internal forces. structure, and then integrate nanostructures and functional units into NEMS. This processing technology can realize the processing of many NEMS devices with complex structures. It is a technology commonly used in the field of nanomaterials, but this processing technology is difficult and repeatable. Poor, currently difficult to achieve mass production
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[0025] Material preparation: select thin-layer SOI materials according to the requirements of the NEMS structure, including the top silicon wafer 1, the middle silicon dioxide sacrificial layer 2, and the bottom silicon wafer 3; figure 1 shown. Its specific parameters are silicon dioxide sacrificial layer 2 thickness 3780 , the top silicon wafer 1 is P-type, crystal orientation, and the thickness is 801
[0026] Thinning of the top-layer silicon wafer: use a thermal oxidation method to perform double-sided wet oxygen thermal oxidation to reduce the thickness of the top-layer silicon wafer 1 . Put the SOI material in the wet oxygen at about 1050°C to generate 500 The silicon dioxide layer 4 has a structure such as figure 2 shown.
[0027] Photolithography: use photolithography to transfer the patterns 6 of metal pads, wiring and electron beam alignment marks to the top layer of silicon wafer 1, apply photoresist 5 on the top layer of the generated silicon dioxide lay...
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The invention discloses a method for manufacturing a complex NEMS structure based on SOI material. The method comprises the steps as follows: 1) a top layer silicon chip of the SOI material is oxidized by a thermal oxidization method to reduce the thickness of the silicon chip; 2) silicon dioxide at the areas corresponding to a bonding pad, a wiring and an electron beam alignment mark on the silicon dioxide is etched off by photoetching and a wet etching method; 3) a metal layer is generated by a magnetron sputtering method, and the bonding pad, the wiring and the electron beam alignment markare peeled off; 4) a NEMS structure figure is transferred to the top layer silicon chip by electron beam etching and the wet etching method; 5) the silicon chip at the area corresponding to the NEMS structure figure is etched off by an inductive coupling plasma etching method to form the NEMS structure; and 6) a silicon dioxide sacrificial layer with the NEMS structure at the bottom and the SOI material at the top is eroded by HF, and the NEMS structure is released by a carbon dioxide supercritical extraction method. The invention has the characteristics of exact processing positioning, high processing precision and being capable of preparing in bulk repeatedly.
Description
technical field [0001] The invention relates to a method for manufacturing a NEMS structure, in particular to a method for manufacturing a NEMS structure based on SOI material. Background technique [0002] NEMS (nano-electro-mechanical-system, nano-electromechanical system) technology is a new concept proposed based on MEMS (micro-electro-mechanical-system, micro-electromechanical system) technology in the late 1990s. It is a kind of ultra-small electromechanical integrated system with the characteristics of nanotechnology in terms of effect and effect. Generally, it refers to devices and systems whose feature size is from sub-nanometer to hundreds of nanometers, and which are characterized by new effects (quantum effects, interface effects and nano-scale effects) produced by nanoscale structures. [0003] NEMS has many unique properties: (1) ultra-small mass: the effective mass of NEMS devices is within a gram (10 -18 g) magnitude; (2) ultra-high frequency: the mechanic...
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IPC IPC(8): B82B3/00
Inventor 罗蓉杨拥军
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP