Corrosion inhibitor for after polishing detergent

Abstract

The invention relates to a corrosion inhibitor for an after polishing detergent. A creatine compound which is taken as the corrosion inhibitor is creatine and a salt compound thereof. The corrosion inhibitor is used in the after polishing detergent for chemical mechanical polishing, and can protect the surface of a processing object from corrosion when the after CMP (chemical mechanical polishing) cleaning is carried out. A chemical formula which can best display the characteristics of the corrosion inhibitor is shown.

Description

technical field [0001] The present invention relates to a corrosion inhibitor used in a post-grinding cleaner, and aims to provide a corrosion inhibitor that can protect the surface of a processed object from being corroded during post-cleaning of chemical mechanical grinding. Background technique [0002] Chemical mechanical polishing or planarization (CMP) is a technique used in semiconductor manufacturing processes to planarize the top surface of a semiconductor component or substrate. The semiconductor device generally consists of a silicon-based wafer with active regions formed in or on the wafer and metal (typically copper or tungsten) deposited in etch lines along the wafer to connect the active regions. Connecting lines within the area. Excess copper that has been deposited on the semiconductor component is removed using a CMP process to planarize the surface. CMP procedures generally involve spinning the semiconductor substrate against a wet polishing surface unde...

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Problems solved by technology

[0004] However, since BTA used as a copper corrosion inhibitor in the copper CMP process is sticky and difficult to remove, it is conventionally known to add acidic and alkaline chemicals to reduce the viscosity of BTA in the cleaning step, and to cooperate with the scrubbing method in order to clean other particles , metal ions and organic matter are removed at the same time, but the surface of the wafer cleaned by conventional technology still has residual BTA

And because the conventional post-CMP cleaning process of copper only reduces the viscosity of BTA by adding chemicals, it cannot completely remove BTA, resulting in BTA remaining on the wafer surface, and even agglomerating on the wafer surface, causing pollution

The BTA remaining on the surface of the wafer will cause problems such as increased resistance, thermal effects, and poor interface between the subsequent thin film and copper, which will reduce the reliability of the wafer. Therefore, BTA has been confirmed as the chemical mechanical polishing of the wafer. Common Sources of Organic Contamination During Cleaning

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