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Method of forming a molybdenum surface with an enhanced diffusion barrier

PendingCN122438970Areduce thicknessfree from harm
Semiconductor processing methods and semiconductor structures have molybdenum-containing features. Methods include etching a substrate to form one or more shallow trench isolations and a plurality of vertically extending channels. Methods include forming one or more molybdenum-containing layers within one or more of the shallow trench isolations. Methods include contacting exposed surfaces of the one or more molybdenum-containing layers with a nitrogen-containing precursor, where such contacting nitridizes the exposed surfaces of the one or more molybdenum-containing layers, forming a protective layer over the one or more molybdenum-containing layers.
Owner:APPLIED MATERIALS INC