Semiconductor processing methods and
semiconductor structures have
molybdenum-containing features. Methods include
etching a substrate to form one or more shallow trench isolations and a plurality of vertically extending channels. Methods include forming one or more
molybdenum-containing
layers within one or more of the shallow trench isolations. Methods include contacting exposed surfaces of the one or more
molybdenum-containing
layers with a
nitrogen-containing precursor, where such contacting nitridizes the exposed surfaces of the one or more molybdenum-containing
layers, forming a protective layer over the one or more molybdenum-containing layers.