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Ferromagnetic thin-film wave absorbing material with periodic structure

A technology of ferromagnetic film and wave-absorbing materials, which is applied to the parts, shielding, instruments, etc. of instruments to achieve the effect of convenient operation, good wave-absorbing performance, and simple structure improvement

Inactive Publication Date: 2009-10-07
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Purpose of the invention: the technical problem to be solved by the present invention is to provide a ferromagnetic film absorbing material with a periodic structure for the problems existing in the existing Salisbury screen in the microwave-absorbing application, which solves the problem of the classic Salisbury screen on the thickness of the dielectric layer. limit, thin absorbing materials can be constructed

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  • Ferromagnetic thin-film wave absorbing material with periodic structure
  • Ferromagnetic thin-film wave absorbing material with periodic structure
  • Ferromagnetic thin-film wave absorbing material with periodic structure

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Embodiment 1

[0032] Material:

[0033] The dielectric layer is SiO 2 Or polyethylene terephthalate d=2~10nm

[0034] Ferromagnetic thin film layer d=0.25μm

[0035] Using a radio frequency magnetron sputtering device, in an Ar gas environment, Fe is sputtered and deposited on the dielectric layer through magnetic orientation, and then the ferromagnetic thin film layer and SiO 2 Or polyethylene terephthalate dielectric films are alternately arranged to form a laminated multilayer film. Due to SiO 2 , Si, polyester, especially polyethylene terephthalate and other materials have relatively stable chemical properties, so they are often used as dielectric materials. Simultaneously, the function of the medium layer in the present invention is to separate the two ferromagnetic film layers, and the thickness of the medium layer can be made as small as possible, so as to reduce the total thickness of the magnetic film. Within the precision range of commonly used devices in this field, the thic...

Embodiment 2

[0037]Material:

[0038] The dielectric layer is SiO 2 Or polyethylene terephthalate dielectric layer thickness: d = 2 ~ 10nm

[0039] Ferromagnetic thin film layer Film thickness: d=0.3μm

[0040] Ar+N 2 mixed gas N 2 Gas concentration can be controlled

[0041] Adopt radio frequency magnetron sputtering device, the present invention has used the Lab18 type magnetron sputtering equipment of U.S. Lesker company, by Ar+N 2 Sputtering deposition of Fe on SiO in a mixed gas 2 Or polyethylene terephthalate film, Ar gas and N in this embodiment 2 The gas ratio is controlled at 24:6. In the present invention, generally Ar and N 2 N in mixed gas 2 The volume of the gas is controlled at 20% to 50%, the pressure of the mixed gas is 0.2Pa, and the ambient temperature is 160°C to 250°C, which can ensure that the mass ratio of the final N element in the ferromagnetic film layer is not greater than 10%. It has a slight effect on the saturation magnetization of ferromagnetic thin ...

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Abstract

The invention discloses a ferromagnetic thin-film wave absorbing material with periodic structure, which consists of the medium layers and the ferromagnetic thin-film layers arranged with intervals, the ferromagnetic thin-film layer comprises N element with the mass percentage not more than 10% and the balance of Fe element. The thickness range of the ferromagnetic thin-film layer is from 100nm to 900nm. The thickness range of the medium layer is not more than 10nm. The invention controls the thickness of the thin-film wave absorbing material by changing the periodic number of the medium layer and the ferromagnetic thin-film, simply modifies the structure of the ideal magnetic screen itself, and has easy operation. The wave absorbing material has better wave absorbing properties and good absorbing bandwidth, which can satisfy the requirements of the thin absorbing electromagnetic waves in a plurality of application situations. By adopting the ferromagnetic thin-film wave absorbing material with periodic structure, when the incidence of electromagnetic waves are vertical, the reflection frequency response characteristic curve is basically the same as that before being divided into periodic structure, wherein the size of the reflectivity is reduced with certain degree at the low frequency end compared with that before being divided.

Description

technical field [0001] The invention relates to an electromagnetic wave absorbing material, more specifically, a ferromagnetic thin-film wave absorbing material with a periodic structure having good wave absorbing performance and good wave absorbing bandwidth. Background technique [0002] With the development of communication network technology and the improvement of electronic system integration, the problem of electromagnetic compatibility has become increasingly prominent. How to solve this problem has become a problem that must be solved in the development of technology. Using electromagnetic wave absorbing materials to solve the electromagnetic interference between electronic systems or devices is an effective method. The classic Salisbury screen composed of a low dielectric constant dielectric layer and a resistive sheet in front of the metal plate can absorb electromagnetic waves well in a certain frequency range. In order to have the best absorbing performance, the...

Claims

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Application Information

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IPC IPC(8): G12B17/02
Inventor 陈日锋伍瑞新
Owner NANJING UNIV
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