Semiconductor package structure having movable gain variation on circumsphere point

Abstract

The invention discloses a semiconductor package structure having movable gain variation on a circumsphere point, comprising a substrate, crystal bonded plastic, a chip, two or more first rows of circumsphere points and two or more second rows of circumsphere points. The substrate has a package surface and an exposing surface, wherein the package surface has a crystal bonded area; the crystal bonded plastic is formed on the package surface of the substrate; the chip is aligned in the crystal bonded area and arranged on the package surface of the substrate by means of the crystal bonded plastic; the two or more first rows of circumsphere points are arranged on the exposing surface of the substrate; and the two or more second rows of circumsphere points are arranged on the exposing surface of the substrate, and are away from the central line of the crystal bonded area relative to the first rows of circumsphere points, wherein the substrate is also provided with at least one cascade groove formed on the package surface so that the thickness of the substrate in the cascade groove is thinned in a cascade shape towards the direction of the central line of the crystal bonded area, and the crystal bonded plastic is filled in the cascade groove. The cascade groove provides an accommodating space for the crystal bonded plastic so as to reduce overflow pollution.

Description

technical field [0001] The present invention relates to a semiconductor device using semiconductor packaging technology, in particular to a semiconductor package structure in which circumscribing balls have movable gain changes. Background technique [0002] Currently, semiconductor package structures have various package types depending on the integrated circuits of semiconductor chips packaged inside. The so-called ball grid array (BGA, ball grid array) packaging structure is provided with two or more external ball points (generally referred to as solder balls or solder reflow) on the bottom surface of the product. ball). The external ball points should be formed on the same bonding plane and have an appropriate and sufficient number as the I / O connecting terminal of the semiconductor package structure, so as to form an electrical connection with the external printed circuit board during operation relationship to meet the needs of high-density surface bonding. Typically...

AI Technical Summary

Problems solved by technology

[0006] However, in the curing of the above-mentioned die-bonding adhesive material 120, the curing of the encapsulant 170, the first row of circumscribed ball points 140 and the second row of circumscribed The reflow welding of ball point 150 or the follow-up thermal cycle test and actual product calculation will have heat treatment. The difference in thermal expansion coefficient between materials will cause thermal stress, or impact stress will be generated in the drop test. These stresses will be applied These 2nd row outer contact points 150 cause breakage and ball drop problems, which affect the quality of electrical connections

In addition, the substrate 110 is prone to warpage

Parts of the first row of outer ball pads 140 or the second row of outer ball pads 150 adjacent to the side corners 131 of the chip 130 also have problems with breakage and ball drop

In addition, during the heating and pressure process of die bonding, the die bonding adhesive material 120 has fluidity and is prone to overflow or creep.

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