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Thin-film transistor

一种薄膜晶体管、膜厚的技术，应用在晶体管、半导体器件、半导体/固态器件制造等方向，能够解决产生载流子捕获以及散射、难以得到硅TFT特性、亚阈值摆动变大等问题，达到降低缺陷密度、良好生产性、减小阈值电压的效果

Active Publication Date: 2009-10-28
ULVAC INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to obtain good characteristics at the interface between the active layer 101 and the gate insulating layer 105 as in the above-mentioned manufacturing process of the silicon TFT.
[0012] As a result, carrier trapping and scattering occur, and there are problems such as increased threshold voltage shift (shift) or increased subthreshold swing (S value), which is one of the characteristics of low-temperature polysilicon TFTs.

Method used

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Experimental program
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Embodiment Construction

[0052] Hereinafter, the present invention will be described based on the illustrated embodiments.

[0053] figure 1 It is a schematic cross-sectional view showing a low-temperature polysilicon TFT (hereinafter referred to as a polysilicon TFT) as a thin film transistor formed by the manufacturing method of the present invention, wherein (a) indicates that the gate insulating layer is a first silicon oxide film, a silicon nitride film and a three-layer laminated structure of a second silicon oxide film; (b) shows a two-layer laminated structure of a first silicon oxide film and a silicon nitride film.

[0054] refer to figure 1 (a), the thin film transistor of the present embodiment includes an active layer 11 including a source region 17, a drain region 19, and a channel region 18 on a substrate 9, and a gate electrode layer 16, and the active layer 11 and the gate electrode layer 16 The gate insulating layer 15 formed between them; the gate insulating layer 15 includes a ...

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Abstract

A thin-film transistor has a gate insulation layer excellent in characteristics and high in reliability with good productivity ensured, and a production method therefore. The thin-film transistor comprises, formed on a substrate (9), an active layer (11) having a source region (17), a channel region (18) and a drain region (19), a gate electrode layer (16), and a gate insulation layer (15) formed between the active layer (11) and the gate electrode layer (16), wherein the gate insulation layer (15) is formed of a first silicon oxide film (12) formed on the active layer (11) side, a second silicon oxide film (14) formed on the gate electrode layer (16) side, and a silicon nitride film (13) formed between the first silicon oxide film (12) and the second silicon oxide film (14).

Description

[0001] This application is a divisional application of an application with a filing date of April 25, 2005 and an application number of 200580000956.0. technical field [0002] The invention relates to a thin film transistor with a silicon oxide film as a gate insulating layer and a manufacturing method thereof. Background technique [0003] In the existing liquid crystal display (LCD) or organic electroluminescent (OLED) devices, the use of amorphous silicon (a-Si) or silicon nitride film (SiNx), or silicon oxide film (SiOx) Amorphous silicon TFT (a-SiTFT) and low temperature polysilicon TFT (LTPS-TFT) which are thin film transistors formed of thin films. In particular, low-temperature polysilicon TFTs can have higher mobility than amorphous silicon TFTs, and can be fabricated on transparent and insulating substrates such as glass substrates. [0004] As a typical structure of low-temperature polysilicon TFT, such as Figure 18 coplanar transistors as shown. [0005] The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/51H01L29/04H01L21/318H01L21/336H01L29/49
CPCH01L29/66757H01L29/4908
Inventor 若松贞次菊池亨桥本征典仓田敬臣浅利伸斋藤一也
Owner ULVAC INC