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Methods for forming polysilicon thin film and gate

A polysilicon thin film and polysilicon layer technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem that the polysilicon thin film cannot take into account flatness and interface quality, etc., to improve the formation quality and smooth transition between layers Effect

Inactive Publication Date: 2009-11-04
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The invention provides a method for forming a polysilicon thin film and a gate, so as to improve the phenomenon that the existing polysilicon thin film formation method cannot meet the requirements of flatness and interface quality, and improve the formation quality of the polysilicon gate

Method used

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  • Methods for forming polysilicon thin film and gate
  • Methods for forming polysilicon thin film and gate
  • Methods for forming polysilicon thin film and gate

Examples

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Effect test

no. 1 example

[0091] The first embodiment of the present invention introduces a new method for forming a polysilicon film, Figure 4 It is a flow chart of the method for forming a polysilicon thin film in the first embodiment of the present invention, Figure 5 to Figure 7 In order to illustrate the device cross-sectional view of the method for forming a polysilicon film in the first embodiment of the present invention, the following is combined Figure 4 to Figure 7 The first embodiment of the present invention will be described in detail.

[0092] Step 401: Provide a substrate.

[0093] The substrate in this embodiment can be a simple silicon substrate, or a substrate with a certain structure formed, such as a silicon oxide layer on the surface of the substrate. In addition, in other embodiments of the present invention, the substrate can also be made of other materials, such as germanium material, gallium arsenide material or silicon carbide material.

[0094] Step 402: Put the substr...

no. 2 example

[0113] The second embodiment of the present invention introduces another new polysilicon film forming method, Figure 8 It is a flow chart of the method for forming a polysilicon thin film in the second embodiment of the present invention, Figure 9 to Figure 11 In order to illustrate the device cross-sectional view of the method for forming a polysilicon film in the second embodiment of the present invention, the following combination Figure 8 to Figure 11 The second embodiment of the present invention will be described in detail.

[0114] Step 801: Provide a substrate.

[0115] The substrate in this embodiment can be a simple silicon substrate, or a substrate with a certain structure formed, for example, a silicon oxide layer can be formed on the surface of the substrate. In addition, in other embodiments of the present invention, the substrate can also be made of other materials, such as germanium material, gallium arsenide material or silicon carbide material.

[0116]...

no. 3 example

[0134] The third embodiment of the present invention introduces a new gate forming method, Figure 12 It is a flow chart of the gate formation method in the third embodiment of the present invention, Figure 13 to Figure 16 In order to illustrate the device cross-sectional view of the gate formation method in the third embodiment of the present invention, the following is combined with Figure 12 to Figure 16 The third embodiment of the present invention will be described in detail.

[0135] Step 1201: providing a substrate on which a gate oxide layer has been formed.

[0136] Figure 13 is a schematic cross-sectional view of the substrate in the third embodiment of the present invention, as Figure 13 As shown, the substrate in this embodiment includes a silicon substrate 1301 and a gate oxide layer 1302 thereon. In other embodiments of the present invention, the silicon substrate 1301 can also be a substrate of other materials, Such as germanium materials, gallium arseni...

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Abstract

The invention discloses a method for forming a polysilicon thin film, comprising the following steps: providing a substrate; putting the substrate into a settling chamber; guiding silane into the settling chamber; settling a first polysilicon layer on the substrate; stopping guiding silane into the settling chamber; guiding disilane into the settling chamber; settling a second polysilicon layer on the first polysilicon layer; stopping guiding disilane into the settling chamber; and taking out the substrate. The invention also discloses a method for forming a gate. The polysilicon thin film formed by the method can meet both the requirements of planeness and interface quality, and a gate component formed by the polysilicon thin film can be improved in the consistence, the gate leakage current characteristic and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a polysilicon thin film and a grid. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, the integration of chips is getting higher and higher, and the size of components is getting smaller and smaller. The various effects caused by the high density and small size of devices have an increasing impact on the results of semiconductor process manufacturing. Outstanding, new process improvements are often required for small-scale devices. [0003] Taking the manufacture of polysilicon gate as an example, when the size of the device is reduced, the requirements for its manufacture are further improved, not only the quality of the interface between it and the underlying material (usually the gate oxide layer) is required to be better, in order to obtain better The interface characteristics (interfac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L21/28H01L21/285H01L21/336
Inventor 何永根
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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