Photoresist cleaning agent composition
A technology of cleaning agent and composition, applied in the direction of photosensitive material processing, etc., can solve the problems of high corrosion rate of metal aluminum, corrosion of cleaning equipment, corrosion of wafer pattern, etc., and achieves the effect of good application prospect and weak corrosion.
Inactive Publication Date: 2009-12-30
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology
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Embodiment 1～35
[0027] Table 1 is the photoresist cleaning agent formula of Examples 1-35. According to the components listed in Table 1 and their contents, the cleaning agent of each embodiment was simply mixed uniformly, and each cleaning agent was a clear and transparent homogeneous solution.
[0028] Table 1. Component and content of embodiment 1~35 cleaning agent
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[0034] The beneficial effects of the present invention will be further illustrated below through effect examples.
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The invention discloses a photoresist cleaning agent composition, which contains alcohol amine compound, water-soluble polar organic solvent and water, and also contains one or several selected from inositol phosphate ester and inositol phosphate salt. The cleaning agent composition can effectively remove photoresist on a semiconductor wafer, etched or ash incinerated photoresist residues or other residues, simultaneously has weak corrosion for metals such as aluminum, copper and the like and nonmetallic materials such as silicon oxide and the like, and has good application prospect in the microelectronic field such as cleaning of semiconductor wafers and the like.
Description
technical field [0001] The invention relates to a cleaning agent composition in a semiconductor manufacturing process, in particular to a photoresist cleaning agent composition. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist coating is first formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and then exposed and developed using an appropriate mask. According to the photoresist used characteristics, remove the photoresist on the exposed or unexposed part, form a photoresist pattern on the required part, then perform plasma etching or reactive gas etching on the photoresist pattern, and finally use an organic cleaning agent combination Chemical or oxygen plasma ashing to remove the remaining photoresist. In the etching process, at the sidewall of the photoresist mask, the etching gas reacts complexly with the photoresist, the substrate, the insulating film on the substrate, and the low-diel...
Claims
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Inventor 史永涛彭洪修曹惠英
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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