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Metal oxide semiconductor device and manufacturing method thereof

A technology of oxide semiconductor and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem that the junction depth cannot be effectively reduced, and achieve the purpose of suppressing short-channel effects, improving device performance, and reducing junction capacitance. effect with junction leakage current

Active Publication Date: 2011-04-20
SEMICON MFG INT (SHANGHAI) CORP
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AI Technical Summary

Problems solved by technology

[0012] However, the P-type impurity or N-type impurity in the pocket-shaped doped region formed in step S5 will produce a large transient enhanced diffusion (TED) effect in the subsequent annealing process, and the implanted The expected thermal diffusion effect of ions in the annealing process will make the junction depth cannot be effectively reduced

Method used

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  • Metal oxide semiconductor device and manufacturing method thereof
  • Metal oxide semiconductor device and manufacturing method thereof
  • Metal oxide semiconductor device and manufacturing method thereof

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Embodiment Construction

[0033] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0034] Please refer to figure 2 , which is a flowchart of a metal oxide semiconductor (MOS) device manufacturing process provided by an embodiment of the present invention. In order to contrast with the existing technology, it adopts the same figure 1 The same order of the process shown in is illustrated, and the same process flow adopts the same label, of course, the sequence of the process flow is not intended to limit the present invention, and those skilled in the art can make appropriate adjustments as needed; for example, the lightly doped The order of source-drain ion implantation and pocket implantation can be reversed. As shown in the figure, it includes the following steps:

[0035] S1: providing a semiconductor substrate, wherein the semiconductor substrate has a plurality of isolation structures;

[0036] S2: performing well ...

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Abstract

The invention discloses a metal oxide semiconductor device and a manufacturing method thereof. In the prior pocket injection process, a carbon ion injection process is increased so as to inhibit the transient enhanced diffusion effect of the semiconductor device in a manufacturing process, further acquire low junction capacitance and junction leakage current, effectively inhibit the short channeleffect and improve the performance of the device. The metal oxide semiconductor device comprises a semiconductor substrate and a grid structure formed on the semiconductor substrate, wherein the semiconductor substrate at two sides of the grid structure is provided with a source doped area and a drain doped area which are opposite, the opposite edge of the source doped area and the drain doped area is provided with a pocket doped area, and the pocket doped area comprises carbon impurity and P-type impurity or N-type impurity.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a pocket implant region of a Metal Oxide Semiconductor (MOS) device and a forming method thereof. Background technique [0002] With the development of high integration of semiconductor devices, the gate length of metal oxide semiconductor (MOS) devices is being scaled down to smaller sizes. Correspondingly, the manufacturing process of semiconductor devices is also being continuously improved to meet people's requirements device performance requirements. The pocket implantation (or halo implantation) process is a link closely related to the device performance developed with the reduction of the size of semiconductor devices. The pocket doped regions formed not only affect the The short-channel effects (SCEs) of the device are also closely related to the channel mobility, junction capacitance, junction leakage current and other parameters. [0003] In...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336
Inventor 赵猛
Owner SEMICON MFG INT (SHANGHAI) CORP
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