Photoelectronic device and manufacturing method thereof

A technology for optoelectronic devices and manufacturing methods, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of concentrated ohmic resistance injection current, poor heat dissipation of sapphire substrates, and inability to effectively improve the luminous efficiency of light-emitting diodes, so as to improve luminous efficiency. Effect

Inactive Publication Date: 2010-01-06
TEKCORE CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, although the light-emitting diode element and its technology solve the problem of poor heat dissipation of the sapphire substrate, it leads to problems such as the ohmic resistance generated between the metal electrode and the photoelectric element or the injection current is too concentrated. In addition, the overall luminous efficiency of the light-emitting diode cannot be achieved. Effective promotion

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  • Photoelectronic device and manufacturing method thereof
  • Photoelectronic device and manufacturing method thereof
  • Photoelectronic device and manufacturing method thereof

Examples

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no. 1 example

[0045] Please refer to figure 2 and image 3 As shown, a method for manufacturing an optoelectronic device according to the first embodiment of the present invention includes steps S11 to S17.

[0046] In step S11 , a photoelectric element 22 is formed on a substrate 21 . In this embodiment, taking the manufacture of blue light-emitting diodes as an example, the substrate 21 is a sapphire substrate, and the photoelectric element 22 is a group III or V compound semiconductor material. Generally speaking, the photoelectric element 22 can be made of a nitride series material such as a hexagonal gallium nitride (GaN) compound, and is formed on the substrate by a metalorganic chemical vapor deposition (MOCVD) or a molecular beam epitaxy (MBE) method. on the substrate 21. In addition, the photoelectric element 22 includes multiple semiconductor layers, and these semiconductor layers include an n-type semiconductor, a light-emitting layer and a p-type semiconductor layer. The ph...

no. 2 example

[0058] Please refer to Figure 4 and Figure 5 As shown, a method for manufacturing an optoelectronic device according to the second embodiment of the present invention includes steps S21 to S27.

[0059] In step S21 , a photoelectric element 32 is formed on a substrate 31 . Wherein, the materials and formation methods of the substrate 31 and the photoelectric element 32 are the same as the step S11 of the above-mentioned first embodiment, and will not be repeated here.

[0060] In step S22 and step S23 , a reflective ohmic contact film 33 is formed on the photoelectric element 32 . The reflective ohmic contact film 33 has a first conductive layer 331 and a patterned dielectric layer 332. In step S22, a dielectric layer (not shown) is deposited on the photoelectric element 32 and patterned to form a patterned dielectric layer. Electrical layer 332 . Then in step S23 , a first conductive layer 331 is deposited on the patterned dielectric layer 332 , and the first conductive...

no. 3 example

[0064] Please refer to Image 6 and Figure 7 As shown, a method for manufacturing an optoelectronic device according to the third embodiment of the present invention includes steps S31 to S37.

[0065] In step S31 , a photoelectric element 42 is formed on a substrate 41 . Wherein, the optoelectronic element 42 has a nitrogen polarity side N and a gallium polarity side G after formation, and in this embodiment, the nitrogen polarity side N is farther away from the substrate 41 than the gallium polarity side.

[0066] Different from the previous embodiments, in step S32 , before forming the reflective ohmic contact film 43 on the photoelectric element 42 , the nitrogen side N′ of the photoelectric element 42 is etched to roughen the nitrogen side N′. The reflective ohmic contact film 43 is formed in step S33 to step S36 of the process / treatment of the photoelectric element 42 respectively the same as step S12 to step S15 in the above-mentioned first embodiment. In this embod...

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Abstract

A manufacturing method of a photoelectronic device comprises the following steps: forming a photoelectric component on a substrate; forming a reflecting ohmic contact film on the photoelectric component and forming a second conducting layer on the reflecting ohmic contact film; wherein, the reflecting ohmic contact film is provided with a pattern dielectric layer and a first conducting layer; the pattern dielectric layer and the first conducting layer are deposited above the photoelectric component. The invention also discloses the photoelectronic device manufactured by the method.

Description

technical field [0001] The invention relates to a semiconductor element and its manufacturing method, in particular to a photoelectric device and its manufacturing method. Background technique [0002] At present, common optoelectronic devices such as light-emitting diodes (light-emitting diodes, LEDs) are light-emitting elements made of semiconductor materials of Group III and Group V in the periodic table, which have the advantages of small size, high brightness, low calorific value, and low power consumption. Low power, no radiation, no mercury, long life, fast response, high reliability, etc., so its application range covers various items in daily life, such as home appliances and indicator lights or light sources of various instruments. Recently, due to the development and application of multi-color and high-brightness, the scope of application has been developed towards outdoor displays, and red, blue and green are the three primary colors of full-color display, so mak...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 富振华吕根泉王冠儒
Owner TEKCORE CO LTD
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