Quartz glass crucible and silicon single crystal pulling method using same

Abstract

The invention provides a quartz glass crucible used for silicon single crystal pulling, in particular to a quartz glass crucible which inhibits the area of crystalline silica obtained by crystallizing amorphous silica to be less than 10% of the area of the crucible and inhibits the density of the dent generated by open bubbles on the inner surface of the crucible to be 0.01-0.2count / mm<2> and to a method which uses the quartz crucible and inhibits the melting loss speed of the inner surface of the crucible to be less than 20mu m / hr for silicon single crystal pulling, thus preventing air holes.

Description

technical field [0001] The present invention relates to a quartz glass crucible for pulling a silicon single crystal and having few pinholes, and a silicon single crystal pulling method using the quartz glass crucible. Background technique [0002] Silicon single crystals used as semiconductor materials such as silicon wafers are mainly produced by the CZ method. [0003] The production method is to heat and melt polysilicon put into a quartz glass crucible to form a silicon melt (Silicon melt), and grow a single crystal centered on the seed crystal soaked in this liquid surface at high temperature, and gradually pull it up. And the method of growing into a rod-shaped single crystal. [0004] The silicon single crystal in pulling is often used in the silicon melt at the center of the crucible, therefore, if air bubbles floating from the inner surface of the crucible adhere to the interface of the silicon single crystal and the silicon melt, they directly enter the silicon s...

AI Technical Summary

Problems solved by technology

[0009] Existing above-mentioned air hole prevention method all is when carrying out the pulling of silicon single crystal, regulates the furnace pressure when polysilicon melts and the furnace pressure when pulling, prevents the method that air bubble is involved in silicon single crystal, but, because The raw material polysilicon is melted in a quartz glass crucible, and the silicon single crystal is pulled from the molten silicon in the crucible. Therefore, the influence of the quartz glass crucible is large.

[0010] However, at present, the influence of the properties of the quartz glass crucible on the pores has not been fully studied.

Images