Quartz glass crucible and silicon single crystal pulling method using same

A technology of quartz glass crucible and silicon single crystal, which is applied in the directions of self-melting pulling method, single crystal growth, single crystal growth, etc. It can solve the problems of large influence of quartz glass and insufficient research on the influence of pores

Inactive Publication Date: 2010-01-13
JAPAN SUPER QUARTZ CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Existing above-mentioned air hole prevention method all is when carrying out the pulling of silicon single crystal, regulates the furnace pressure when polysilicon melts and the furnace pressure when pulling, prevents the method that air bubble is involved in silicon single crystal, but, because The raw material p

Method used

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  • Quartz glass crucible and silicon single crystal pulling method using same
  • Quartz glass crucible and silicon single crystal pulling method using same
  • Quartz glass crucible and silicon single crystal pulling method using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～3、 comparative example 1～6

[0097] Using a quartz glass crucible (diameter of 28 inches) shown in Table 1, the silicon single crystal was pulled with a furnace pressure of 40 torr, an argon atmosphere, and a pulling time of 100 hr.

[0098] The results are shown in Table 1.

[0099] In addition, in Table 1, the inner surface crystallization ratio (%) is the proportion of crystalline silicon produced by crystallization of amorphous silicon on the inner surface of the crucible.

[0100] Open cell density (count / mm 2 ) is the inner surface density of the crucible in the concave part generated by open bubbles.

[0101] The rate of melting loss (μm / h) is the rate at which the thickness of the inner surface of the crucible decreases.

[0102] The void content rate (%) is the number of voids contained in one wafer.

[0103] Examples 1-3 are quartz glass crucibles of the present invention, and Comparative Examples 1-6 are quartz glass crucibles outside the scope of the present invention.

[0104] The inner s...

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Abstract

The invention provides a quartz glass crucible used for silicon single crystal pulling, in particular to a quartz glass crucible which inhibits the area of crystalline silica obtained by crystallizing amorphous silica to be less than 10% of the area of the crucible and inhibits the density of the dent generated by open bubbles on the inner surface of the crucible to be 0.01-0.2count/mm<2> and to a method which uses the quartz crucible and inhibits the melting loss speed of the inner surface of the crucible to be less than 20mu m/hr for silicon single crystal pulling, thus preventing air holes.

Description

technical field [0001] The present invention relates to a quartz glass crucible for pulling a silicon single crystal and having few pinholes, and a silicon single crystal pulling method using the quartz glass crucible. Background technique [0002] Silicon single crystals used as semiconductor materials such as silicon wafers are mainly produced by the CZ method. [0003] The production method is to heat and melt polysilicon put into a quartz glass crucible to form a silicon melt (Silicon melt), and grow a single crystal centered on the seed crystal soaked in this liquid surface at high temperature, and gradually pull it up. And the method of growing into a rod-shaped single crystal. [0004] The silicon single crystal in pulling is often used in the silicon melt at the center of the crucible, therefore, if air bubbles floating from the inner surface of the crucible adhere to the interface of the silicon single crystal and the silicon melt, they directly enter the silicon s...

Claims

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Application Information

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IPC IPC(8): C30B15/10C30B29/06
Inventor 岸弘史神田稔
Owner JAPAN SUPER QUARTZ CORP
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