Technique for atomic layer deposition

Abstract

A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by a method for forming a strained thin film. The method may comprise supplying a substrate surface with one or more precursor substances having atoms of at least one first species and atoms of at least one second species, thereby forming a layer of the precursor substance on the substrate surface. The method may also comprise exposing the substrate surface to plasma-generated metastable atoms of a third species, wherein the metastable atoms desorb the atoms of the at least one second species from the substrate surface to form an atomic layer of the at least one first species. A desired amount of stress in the atomic layer of the at least one first species may be achieved by controlling one or more parameters in the atomic layer deposition process.

Description

technical field [0001] The present invention relates to semiconductor technology, in particular to atomic layer deposition (atomic layer deposition) technology. Background technique [0002] Modern semiconductor processing has created a need for precise atomic-level deposition of high quality thin film structures. In response to this need, various film growth techniques collectively referred to as "atomic layer deposition (ALD)" or "atomic layer epitaxy (ALE)" have been developed in recent years. ALD techniques are capable of depositing uniform and conformable films with atomic layer accuracy. Typical ALD processes use continuous self-limiting surface reactions to control film growth within a monolayer thickness regime. Due to its good potential for film conformity and uniformity, ALD has become the technology of choice for advanced applications such as high-k gate oxides in microelectronic assemblies, storage capacitor dielectrics, and Copper diffusion barrier. In fact,...

AI Technical Summary

Problems solved by technology

Further, energetic ions also cause crystalline defects, which necessitates post-deposition annealing

[0006] Moreover, conformal doping of ALD-deposited films, especially in 3-D structures (e.g., FinFETs), remains a challenge for process engineers

It is not desirable to use existing ion implantation techniques to introduce dopants into a 3-D conformally covered structure, not only because it is difficult to achieve uniform dopant distribution, but also because the implantation Potential damage from post-implant anneal

Images