Inductive coupling coil and plasma processing device adopting same

Abstract

The invention provides an inductive coupling coil. The coil comprises an even number of coil windings, wherein the coil windings are arranged in pairs; two coil windings in each pair of the coil windings have the same shape and are connected in parallel with each other, the input end of one coil winding is positioned in the center of the inductive coupling coil, while the output end is positionedon the edge of the inductive coupling coil and is connected in series with a reactance module; the input end of the other coil winding is positioned on the edge of the inductive coupling coil, while the output end is positioned in the center of the inductive coupling coil and is connected in series with the reactance module. Furthermore, the invention also provides a plasma processing device adopting the inductive coupling coil. The inductive coupling coil and the plasma processing device can easily realize conjugate match of impedance so as to improve the absorption efficiency of power, and ensure density distribution of generated plasma to be more evenly, so that manufacturing / processing results of a processed workpiece are more evenly.

Description

technical field [0001] The present invention relates to the field of microelectronic technology, in particular to an inductively coupled coil and a plasma processing device using the inductively coupled coil. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. At present, in the field of processing / handling of semiconductor devices, especially in the manufacturing process of IC (Integrated circuit, integrated circuit) or MEMS (Micro Electromechanical System, microelectromechanical system) devices, it is often necessary to use such methods as plasma etching, Plasma processing technology for deposition or other processes, and these technologies are usually realized by means of plasma processing devices such as plasma...

AI Technical Summary

Problems solved by technology

[0019] In particular, with the continuous increase in the size of processing workpieces such as wafers (currently increased from 200mm to 300mm, or even larger), in order to maintain a large-area high-density plasma that meets the process requirements, the length of the coil needs to be increased And the number of turns, however, the increase of the coil length will lead to the increase of the coil inductance, too high inductance can hardly achieve the best conjugate matching of the impedance through the capacitance in the matcher, which will reduce the power absorption efficiency, and make it difficult to obtain Large-area, high-density, uniformly distributed plasma for processing / processing

[0020] Therefore, in the actual process, although the plasma can diffuse from the generation area below the dielectric window to the surface of the processed workpiece and the center and edge of the chamber, it is difficult to obtain plasma on the surface of the workpiece only by diffusion within a certain process range. Uniformly distributed plasma, which makes the processing / processing of wafers and other processing workpieces have the problem that the central part is processed slowly and the edge part is processed relatively quickly, resulting in uneven processing / processing results of the processed workpieces

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