Coarsening structure, coarsening surface and coarsening layer of optoelectronic element and manufacturing method of optoelectronic element

Abstract

The invention provides a coarsening structure, a coarsening surface and a coarsening layer of an optoelectronic element and a manufacturing method of the optoelectronic element. The optoelectronic element with double-scale coarsening structures is characterized in that: impurities are doped in an extension process of a semiconductor of the optoelectronic element to allow the semiconductor to growa plurality of island bodies; subsequently, the extension temperature is lowered so as to continuously form a plurality of pin holes on the plurality of island bodies, wherein the pin holes are distributed on the top parts and side faces of the island bodies, so the total internal reflectivity of rays in the optoelectronic element is greatly reduced and the light intensity performance of the optoelectronic element is enhanced. Compared with the conventional art, the process of the invention has the advantages of low pollution, simple process, low cost, better light extraction efficiency, bigger effective area of double-scale light scattering surface and the like.

Description

technical field [0001] The invention relates to a photoelectric element roughening structure and its technology, in particular to a photoelectric element double-scale roughening structure and its technology. Background technique [0002] The luminous efficiency of light-emitting elements using solid-state materials is mainly the result of the addition of internal quantum efficiency and external quantum efficiency. Generally speaking, the internal quantum efficiency is more related to the characteristics of the material itself and the epitaxial quality, while the external quantum efficiency is related to the refractive index of the material and the flatness of the surface. However, the efficiency of known light-emitting diodes is limited by the inability to completely emit the generated light outwards, because typical semiconductor materials compare with ambient air (n=1.0) or encapsulation material-epoxide (n≈1.5), Has a higher refractive index (n≈2.2-3.8). [0003] Accord...

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Problems solved by technology

However, the processing method is not suitable for gallium nitride (GaN) series materials, because gallium nitride series materials are very strong and resistant to acid and alkali corrosion, and general chemical reagents and organic solvents are difficult to etch GaN Series Materials

The most commonly used method to etch gallium nitride is reactive ion etching (RIE), but this method will affect the quality of epitaxy and increase the complexity of the process

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