Method and device for correcting mask plate patterns
A mask and pattern technology, applied in the field of mask pattern correction, can solve the problems of inability to guarantee the mask pattern accuracy, short process time, long process time, etc., and achieve a balanced optical proximity correction effect and product yield. High and good detection effect
Inactive Publication Date: 2010-03-03
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0008] The first technical solution is to segment the unit area and the peripheral circuit area according to the cutting step length of the unit area. Its advantage is to ensure the accuracy required for segmenting the mask pattern of the unit area. The disadvantage is that the process Long time, high power consumption
[0009] The second technical solution is to process the unit area and the peripheral circuit area in sections according to the cutting step length of the peripheral circuit area. The precision required for segment processing
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[0038] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0039] The first aspect of the present invention will be described below in conjunction with specific embodiments. Specifically, the mask pattern is typically a mask pattern of a logic circuit product. Wherein, the first area refers to a peripheral circuit area, and the second area refers to a storage area, and vice versa. figure 1 It shows a schematic structural diagram of a logic circuit product according to a specific embodiment of the present invention. Reference figure 1 , The logic circuit product 1 usually includes a peripheral circuit area 11 and a storage area 12. Wherein, the peripheral circuit area 11 mainly includes a logic circuit, which is used to complete a predetermined logic circuit function. The storage area 12 mainly includes a cell array and other circuits (such as a decoding circuit, a refresh circuit, etc.), which are used to store data r...
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The invention relates to a method and a device for correcting mask plate patterns, wherein a first segmenting device segments a first area of the mask plate patterns according to a first cutting steplength, and a second segmenting device segments a second area of the mask plate patterns according to a second cutting step length. The lengths of the first cutting step length and the second cuttingstep length are different. The method and the device can effectively balance the working procedure time and the optical proximity correction effect. The invention is also particularly suitable for logic circuit products to achieve better evenness of key size bands of the logic circuit products and high rate of good product. Besides, a mask plate detector platform can better detect the mask plate patterns of the logic circuit products.
Description
Technical field [0001] The present invention relates to the field of semiconductor photolithography technology, in particular to a method and device for correcting mask patterns based on optical proximity correction. Background technique [0002] In the integrated circuit manufacturing process, multiple photoetching steps are required, and the quality of photoetching directly affects the product qualification rate. In the semiconductor manufacturing process, the essence of photolithography is to copy the temporary circuit structure to the silicon wafer that will be etched and ion implanted in the future. These structures are first fabricated in the form of graphics on a quartz reticle called a reticle, which contains the graphics to be repeatedly generated on the silicon wafer. [0003] However, with the improvement of integrated circuit integration and the resolution limit of the exposure machine itself, the light diffraction and interference between the close structures on the m...
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IPC IPC(8): G03F1/14G03F1/36
Inventor 洪齐元王谨恒高根生刘庆炜
Owner SEMICON MFG INT (SHANGHAI) CORP