Purity detecting method and device for polysilicon

A purity detection and polysilicon technology, applied in the chemical and solar fields, can solve the problems of low test results of impurity element content, reduce the accuracy of analysis and test, and react violently, and achieve the effect of eliminating the influence of impurities, eliminating interference and improving detection accuracy.

Inactive Publication Date: 2010-03-31
SOUTH CHINA NORMAL UNIVERSITY
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Problems solved by technology

[0010] In the process of digestion of silicon samples provided by the technical solution provided by the prior art, the reaction is violent and the solution is easily boiled, causing the volatilization of As, B, P and other elements in volatile compounds, which makes the test results of impurity element content low and reduces the analytical efficiency. test accuracy

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  • Purity detecting method and device for polysilicon
  • Purity detecting method and device for polysilicon
  • Purity detecting method and device for polysilicon

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Embodiment 1

[0036] Embodiment 1: The specific embodiment 1 of the present invention provides a method for detecting the purity of polysilicon. The technical scenario of this embodiment is that in this embodiment, 10 g of polysilicon ingots are crushed, crushed and ball milled to obtain silicon powder; this embodiment uses The deionized water is distilled water; the polyhydroxy compound selected in this embodiment can be mannitol. The method as image 3 Shown: includes:

[0037] Step 31, after washing the silicon powder with twice distilled water for 3 times, drying to constant weight;

[0038] Step 32. Weigh 0.5000g of silicon powder and place it in a Teflon plate, add water to wet the sample, and add 0.5mL of mannitol solution with a concentration of 2.5g / L;

[0039] The weight of silicon powder weighed in this step is accurate to 0.1 mg.

[0040] Step 33, place the Teflon plate on the upper part of the Teflon container and place it in a sealing body, add 10mL hydrofluoric acid (GR) a...

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Abstract

The implementation mode in the invention provides a purity detecting method and a device for polysilicon, which belongs to the fields of chemical industry and solar energy. The method comprises the following steps: after evenly mixing silicon powder, washing with secondary deionized water, and drying to constant weight; putting the dried silicon powder on a Teflon tray, adding water to moisturizethe sample, and adding a polyol solution; putting the Teflon tray on a Teflon container, putting the Teflon container in a seal body, adding HF and HNO3 into the lower part of the seal body, sealing the seal body, and heating to 110-120 DEG C; and after the silicon powder is completely dissolved and volatilized to the dry state, adding HNO3 to dissolve residues, transferring to a plastic volumetric flask, and measuring the content of impurity elements after the volume becomes constant. The specific implementation mode in the invention also provides a special device for realizing the purity detecting method for polysilicon. The method and the device have the advantage of high detection accuracy.

Description

technical field [0001] The invention relates to the fields of chemical industry and solar energy, in particular to a method and device for detecting the purity of polysilicon. Background technique [0002] With the development of the economy and the acceleration of the urbanization process, the demand for energy is also increasing, and now the main energy used is oil, which is a non-renewable resource, and the waste gas generated after use has a great impact on the environment, so All countries are stepping up research on renewable resources such as solar energy. Polysilicon is the mainstream material of solar cells, its supply and demand condition restricts the development of solar industry, and the purity of polysilicon is an important indicator to determine whether it can be used in solar cells. [0003] In order to detect the purity of polysilicon, prior art provides a kind of purity detection method of polysilicon, this method is as figure 1 shown, including: [0004...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28
Inventor 李核田俊陈红雨
Owner SOUTH CHINA NORMAL UNIVERSITY
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