Catch for etching process and method for preventing catch from jumping

Abstract

The invention discloses a catch for an etching process, comprising a wafer substrate and a warming film layer arranged on the wafer substrate and an insulated film layer for preventing the jumping is arranged below the wafer substrate. The invention also discloses a method for preventing the catch from jumping, comprising the step that an insulated film layer for preventing the jumping is grown at the bottom of the wafer substrate of the catch. The invention has the advantages that equivalent resistance of the catch can be increased so as to weaken the vibration of the catch during discharge, thereby the jumping probability can be reduced; the insulated film layer is added and further the weight of the catch can be increased, thus the intensity for vibration can be reduced; in addition, the insulated layer can be repeatedly used and has the advantage of low cost.

Description

technical field [0001] The invention relates to a baffle used in the etching process, and also relates to a method for preventing the baffle from jumping in the etching process. Background technique [0002] Such as figure 1 As shown, in the semiconductor etching process, in order to reduce the impact of the accumulation of polymer in the etching reaction chamber on the etching process, before etching, a block is used to warm up. The high-voltage circuit of the circuit module can make the electrostatic adsorption disc absorb the block (wafer) during the etching process, and release the electrons on the surface of the wafer after the etching process is completed. + . The steps for repeatability testing of the baffle are: the baffle enters the main etching reaction chamber to warm up; the baffle enters the self-alignment chamber for self-alignment; the baffle enters the main etching reaction chamber to warm up... so repeatedly. [0003] Such as figure 2 As shown, curve 1...

AI Technical Summary

Problems solved by technology

Since each etching will reduce the thickness of the warm-up film on the wafer surface, after the 8th etching, the warm-up film on the wafer surface has been etched, and the DC bias voltage decreases rapidly, so frequent blocking occurs The phenomenon of film jumping in the etching reaction chamber will lead to the self-alignment failure of the stopper in the self-alignment chamber, which seriously affects the efficiency of mass production

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