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Scribing method for MEMS wafer level packaging

A wafer-level packaging and wafer-level technology, which is applied in the dicing field of MEMS wafer-level packaging, can solve the problems of large damage, high cost, and high consumption of grinding wheel blades, and achieve good thermal matching, simple method, and mechanical properties. stable effect

Active Publication Date: 2012-10-24
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the scribing of the grinding wheel blade will cause greater damage to the grinding wheel blade, so the blade needs to be replaced frequently, and the cost is high
For the dicing of the multilayer structure of the glass microcavity MEMS wafer level package, the grinding wheel blade has to act on both the glass sheet and the silicon sheet, so more consumption and further increase in cost

Method used

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  • Scribing method for MEMS wafer level packaging
  • Scribing method for MEMS wafer level packaging
  • Scribing method for MEMS wafer level packaging

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A method for dicing MEMS wafer-level packaging, comprising the following steps: the first step, preparing wafer-level glass microcavity arrays, the preparation of glass microcavity arrays can be formed by dry (ICP etching) and wet etching , can also adopt the thermoforming method, the second step, the above-mentioned wafer-level glass microcavity array and the corresponding MEMS device (can be accelerometer or gyroscope, available in the market, such as produced by AD Company) array Silicon wafers are aligned, and then bonded in a specific atmosphere. The bonding can be done by anodic bonding, fusion bonding, etc., so as to perform wafer-level packaging. The specific atmosphere can be vacuum or nitrogen, helium atmosphere, according to The packaging requirements of MEMS devices are selected. In the third step, scribing cracks are made on one side of the silicon wafer of the packaged wafer according to the scribing requirements. The scribing cracks can be made by wet or d...

Embodiment 2

[0025] A kind of dicing method of glass microcavity MEMS wafer level package, comprises the following steps: the first step, utilizes Si micromachining process to etch and form specific pattern on Si wafer (for example 4 inch wafer), described Si original The micromachining process of the pattern structure on the chip is one of wet etching process, or dry inductively coupled plasma (ICP) etching process, reactive ion etching (RIE) or deep reactive ion etching, and the pattern can be square Or a circular groove array, also can be a variety of different graphics, (actually, a specific pattern engraved on a silicon wafer is a groove in three dimensions, and a pattern in two dimensions). In the second step, the above-mentioned Si wafer and the Pyrex7740 glass wafer (a brand of borosilicate glass, produced by Corning-corning Company in the United States, available in the market, usually polished, and its size is the same as the Si wafer) are anoded Bonding, so that the above specif...

Embodiment 3

[0029] The scribing of Pyrex7740 glass commonly used in the MEMS field comprises the following steps: the first step, the Si wafer and the (4 inches) Pyrex7740 glass wafer of the same size (a brand of borosilicate glass, produced by Corning-corning Corporation of the United States, available in the market, and have been polished) on the EVG-501 anode bonding machine for bonding, and in the second step, scribing cracks are made on one side of the silicon wafer according to the scribing requirements, and the scribing cracks can be made by wet or dry methods. In the third step, a uniform bending force is applied to the packaged wafer with scribing cracks, so that the cracks in the silicon wafer part are expanded due to the tensile stress generated by bending, and the cracks Through the interface, and further spread to the glass, the other parts of the wafer are broken neatly in the direction of the crack. The fourth step is to etch the silicon with TMAH to remove the silicon wafe...

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Abstract

The invention discloses a scribing method for MEMS wafer level packaging, which comprises the following steps: preparing a wafer level glass micro-cavity array, aligning and bonding the wafer level glass micro-cavity array and a corresponding silicon wafer carrying an MEMS element array to perform wafer level packaging; making scribing cracks on one side of the silicon wafer of the packaged waferaccording to scribing needs; and applying an even bending force onto the packaged wafer with the scribing cracks to allow part of the cracks on the silicon wafer to expand under the action of a tensile stress generated by bending, so as to allow other parts of the wafer to crack neatly along the directions of the cracks neatly and obtain an MEMS element packaged in a plurality of glass micro cavities. In the invention, by making scribing cracks on the silicon wafer and uniformly bending, the cracks expand to a transitional layer and finally to glass due to the tension of the silicon wafer, sothe packaged wafer cracks along preset scribing directions. The method has the characteristics of low cost and high efficiency.

Description

technical field [0001] The invention relates to a dicing method for MEMS (Micro-Electro-Mechanical Systems, Micro-Electro-Mechanical Systems) wafer-level packaging, in particular to a dicing method for MEMS wafer-level packaging. Background technique [0002] It is an important new method to prepare MEMS devices encapsulated in glass microcavities. However, the packaged device is composed of a variety of heterogeneous materials such as silicon and glass, and the mechanical and physical properties of the materials are quite different. How to perform low-cost and high-efficiency dicing of silicon-based MEMS devices packaged in glass microcavities , is a difficult problem. [0003] Existing laser scribing methods are suitable for most materials. However, due to the high light transmittance of the glass, the laser directly acts on the glass, the focus is easily shifted, and it is difficult to obtain the required sufficient energy on the surface to form cracks. The cost of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C99/00B81C3/00
Inventor 尚金堂陈波寅徐超张迪柳俊文黄庆安
Owner SOUTHEAST UNIV