Semiconductor photosensitization device, production method and application thereof
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
- Publication Date
- 2010-05-12
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Abstract
Description
technical field
[0001] The invention relates to a semiconductor photosensitive device and its array, in particular to a semiconductor photosensitive device and its array structure, manufacturing method and application thereof. Background technique
[0002] Image sensors are semiconductor devices used to convert optical signals into electrical signals. Image sensor chips (Image Sensors) composed of image sensor devices are widely used in multimedia products such as digital cameras, video cameras, and mobile phones.
[0003] At present, there are mainly two types of image sensors: Charge Coupled Device (CCD) image sensors and Complementary Metal-Oxide-Semiconductor (Complementary Metal-Oxide-Semiconductor) image sensors, hereinafter referred to as CMOS image sensors. Charge-coupled devices have the advantages of high image quality and low noise, but their production costs are also high, and they are not suitable for integration with peripheral circuits. CMOS image sensors are...