Semiconductor photosensitization device, production method and application thereof

A technology for photosensitive devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, radiation control devices, etc., to achieve the effects of reducing manufacturing costs and high image resolution

Active Publication Date: 2010-05-12
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to reduce the circuit complexity of a single pixel unit in a CMOS image sensor and increase the pixels of the image sensor. In order to solve the above technical problems, the present invention proposes a novel semiconductor photosensitive device and its array, and provides A method for fabricating the device is presented.

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  • Semiconductor photosensitization device, production method and application thereof
  • Semiconductor photosensitization device, production method and application thereof
  • Semiconductor photosensitization device, production method and application thereof

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Embodiment Construction

[0031] Hereinafter, three exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiment of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention. Also in the following description, the terms wafer and substrate used may be u...

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Abstract

The invention discloses a semiconductor photosensitization device which comprises a source electrode, a drain electrode, a control grid, a floating grate region, a substrate, and a p-n node diode for connecting a floating gate region and a drain electrode. The floating grate region of the semiconductor photosensitization device is used for storing charges, and the floating grate potential of the semiconductor photosensitization device is related to light exposure intensity and time, thus, the invention can be used as a semiconductor photosensitization device. The invention also discloses production methods of the semiconductor photosensitization device and an image sensor, as well as an image sensor formed by arrays formed by the semiconductor photosensitization device. The semiconductor photosensitization device can simplify the design of a single pixel unit in a traditional image sensor and reduce the area occupied by the single pixel unit, thereby improving the pixel density of the image sensor, increasing the resolution of the image sensor and reducing the production cost of the image sensor.

Description

technical field [0001] The invention relates to a semiconductor photosensitive device and its array, in particular to a semiconductor photosensitive device and its array structure, manufacturing method and application thereof. Background technique [0002] Image sensors are semiconductor devices used to convert optical signals into electrical signals. Image sensor chips (Image Sensors) composed of image sensor devices are widely used in multimedia products such as digital cameras, video cameras, and mobile phones. [0003] At present, there are mainly two types of image sensors: Charge Coupled Device (CCD) image sensors and Complementary Metal-Oxide-Semiconductor (Complementary Metal-Oxide-Semiconductor) image sensors, hereinafter referred to as CMOS image sensors. Charge-coupled devices have the advantages of high image quality and low noise, but their production costs are also high, and they are not suitable for integration with peripheral circuits. CMOS image sensors are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/144H01L21/82H01L27/146H04N5/335
Inventor 王鹏飞刘磊刘伟张卫
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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