Exhaust method and device of thermal field of single crystal furnace

A technology of an exhaust device and an exhaust method, which is applied in the directions of single crystal growth, chemical instruments and methods, crystal growth, etc., can solve the problems of difficult cleaning of the pipe wall, increase the flow rate and flow rate of cooling water, and thermal field damage, etc. Solve the effect of heat loss, increase thermal insulation materials, and flexible disassembly

A technology of an exhaust device and an exhaust method, which is applied in the directions of single crystal growth, chemical instruments and methods, crystal growth, etc., can solve the problems of difficult cleaning of the pipe wall, increase the flow rate and flow rate of cooling water, and thermal field damage, etc. Solve the effect of heat loss, increase thermal insulation materials, and flexible disassembly

CN101709506AInactive Publication Date: 2010-05-19NAN AN SANJING SOLAR POWER

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  • Exhaust method and device of thermal field of single crystal furnace
  • Exhaust method and device of thermal field of single crystal furnace
  • Exhaust method and device of thermal field of single crystal furnace

Examples

Experimental program
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Effect test

Embodiment example 1

[0023] Before the exhaust port was changed, the 18-inch thermal field, the feeding amount was 65KG, the length of the six-inch single crystal growth was 1250mm, the production power was 70KW / hour, and the average use times of the graphite crucible was 18 furnaces. After using the design of the exhaust port, the feeding amount 76KG, can produce six-inch single crystal length 1550mm, production power 58 to 62KW / hour, the average number of times of use of graphite crucible with the same mechanism size increased to 35 furnaces.

Embodiment example 2

[0025] Before the exhaust port was changed, the thermal field was 20 inches, the feeding amount was 80KG, the length of the six-inch single crystal was 1650mm, the production power was 75KW / hour, and the graphite crucible was used for an average of 20 furnaces. After using this design of the exhaust port, the feeding amount 100KG, can produce six-inch single crystal length 2100mm, production power 62 to 66KW / hour, the average use times of graphite crucible with the same mechanism size increased to 40 furnaces.

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Abstract

The invention relates to an exhaust method and a device of a thermal field of a single crystal furnace, and an upper exhaust port is formed on an upper thermal insulation cover of the thermal field of the single crystal furnace for leading air flow to flow out from the upper exhaust port, enter into an air extraction pipeline through a gap between the thermal insulation cover and a furnace wall and be pumped by a vacuum pump. The device comprises the furnace wall, a graphite crucible, a quartz crucible, a heater, the thermal insulation cover and a flow guide cylinder and is characterized in that the thermal insulation cover comprises an upper thermal insulation cover, a main thermal insulation cover and a lower thermal insulation cover, the upper exhaust port is formed on the upper thermal insulation cover, and the gap is maintained between the furnace wall and the thermal insulation cover. Due to that an exhaust air flow channel in the thermal field does not pass through the heater at the bottom, the device can not cause the meaningless heat loss, be more energy-saving in comparison with the original lower exhaust thermal field and simultaneously improve the production efficiency.

Description

technical field [0001] The invention relates to a method and a device for exhausting a heat field of a single crystal furnace, in particular to a method and a device for exhausting a heat field in a Czochralski method (Czochralski method) for growing a single crystal silicon. Background technique [0002] The basic principle of Czochralski single crystal is that the high-purity silicon material is heated and melted, and when the temperature is suitable, the steps of immersing the seed crystal, welding, seeding, shouldering, turning the shoulder, equal diameter, and finishing are completed to complete the pulling of a single crystal rod. system. [0003] In the prior art, high-purity argon gas is injected from the top of the single crystal furnace, and the gas is drawn out by a vacuum pump at the bottom, and the vacuum value in the furnace maintains a dynamic balance (generally around 10-15mbar). For the exhaust process of this process, see figure 2 As shown by the arrow, a...

Claims

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Application Information

Patent Timeline
19 May 2010
Publication
CN101709506A
IPC
C30B15/20
Inventors
南毅; 张伟娜