Rapid heat-treatment temperature measuring and controlling system and measuring and controlling method

Abstract

The invention discloses a rapid heat-treatment temperature measuring and controlling system and a measuring and controlling method. The system comprises an infrared pyrometer, a standard K-shaped thermoelectric couple silicon wafer, a temperature signal processor, a thermoelectric couple thermodetector, a heating power regulator, an alternating current zero crossing detector, a timing counter, a controllable silicon control signal isolation amplifier, a controllable silicon heating source, a heating light set and a control computer. The connection relationships of the assemblies are shown as an attached drawing 1 and the whole system is uniformly coordinated by the control computer for controlling, wherein the heating power regulator is internally set in the program of the computer. The temperature measuring and controlling method comprises the steps of measuring and calibrating the temperature by using the standard thermoelectric couple, measuring the temperature by using the infrared pyrometer, controlling the adjustment of the heating power of light by using the timing counter, dividedly controlling the heating light, adjusting the distribution uniformity of the temperature and the like. The invention can carry out self-adaptive PID adjustment on the temperature, has rapid adjustment and controlling reaction and can fully-automatically achieve the rapid temperature measuring and controlling functions.

Description

technical field [0001] The invention relates to a temperature measurement and control system and a control method for rapid heat treatment equipment, which are suitable for rapid heat treatment equipment, that is, RTP equipment, and belong to the field of semiconductor device manufacturing. Background technique [0002] Rapid thermal processing is a method of heating a single silicon wafer to a temperature range of 400-1300°C in a very short time (often a few seconds). Due to its small thermal budget, small impurity movement in silicon, cold wall design to reduce contamination, small cavity volume to achieve a clean atmosphere, and short heat treatment cycle, it has been increasingly used in semiconductor manufacturing. The wider the application. It is mainly used in (1) thermal annealing after ion implantation to eliminate defects, activation and diffusion of impurities; (2) dense deposited film, such as deposited oxide film; (3) borophosphosilicate glass reflow; (4) barri...

AI Technical Summary

Problems solved by technology

[0003] In China, the research on rapid heat treatment technology has just started, the manufacture of rapid heat treatment equipment is almost blank, and the rapid temperature measurement and control technology and method, one of the key technologies of rapid heat treatment, has no precedent.

Images