Package structure and manufacture method thereof

Abstract

The invention provides a package structure and a manufacture method thereof, belonging to the technical field of micro-electronics manufacture. The package structure comprises a semiconductor substrate, a contact welding pad, a passivation layer, a stress buffer layer and columnar lugs formed on the buffer layer, wherein the areas corresponding to any of the columnar lug structures in the stress buffer layer are provided with main openings and one or more than one auxiliary opening, the main openings and the auxiliary openings are distributed evenly in the composition plane range of the corresponding columnar lugs. The package structure provided in the invention can avoid welding flux from collapsing during reflux in the forming process of columnar lugs and has the characteristic of high reliability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to the packaging technology of electrical and mechanical connections of chips, and in particular to a packaging structure of stud bumps and a manufacturing method thereof. Background technique [0002] As the interconnection density of the chip and the number of chip pins (Pin) increase, the distance between the external connection ports (I / O ports) on the chip is getting smaller and smaller, and the operating speed of the circuit is getting higher and higher. The advanced gold wire packaging technology can no longer meet the requirements of high-performance circuits due to the large delay of circuit signals. The emergence of solder bump (Solder Bump) technology shortens the connection distance between the chip and the next level of packaging, reducing the signal delay caused by the chip package; at the same time, the I / O ports on the chip can be arranged on the ...

AI Technical Summary

Problems solved by technology

Since the stress buffer layer 40 covers the passivation layer 30, the stress buffer layer 40 is relatively flat, and there is often stress concentration in the edge region between the pillar 60 and the stress buffer layer 40, because there is no mechanical gap between the underfill 91 and the stress buffer layer 40 Lock (Mechanical Lock), the stress concentration result is easy to form cracks at the interface between the underfill glue 91 and the stress buffer layer 40 and expand rapidly, eventually leading to device failure

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