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Incineration treatment method

A technology of ashing treatment and ashing, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of surface damage of integrated circuit wafers, reduce the yield rate of integrated circuit wafers, etc., and achieve the goal of improving the yield rate Effect

Active Publication Date: 2011-10-05
SEMICON MFG INT (BEIJING) CORP
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Problems solved by technology

[0004] It can be seen that since the ashing process in the prior art cannot completely remove the impurities remaining on the wafer surface during the polysilicon pre-doping process, it will eventually lead to damage defects on the surface of the produced integrated circuit wafer, reducing the quality of the integrated circuit wafer. Round Yield

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Embodiment Construction

[0016] In the ashing treatment process in the embodiment of the present invention, the ashing reaction gas that adopts has included carbon tetrafluoride (CF 4 ), oxygen (O 2 ) and hydrogen nitride (N 2 h 2 ), to replace the oxygen (O 2 ) and hydrogen nitride (N 2 h 2 ) Composed of ashing reaction gas. During the ashing reaction, oxygen (O 2 ) can remove phosphide (PR) impurities caused by phosphorus doping, carbon tetrafluoride (CF 4 ) and hydrogen nitride (N 2 h 2 ) can remove the hard shell formed by excess elemental phosphorus on the wafer surface.

[0017] According to general knowledge in the art, due to carbon tetrafluoride (CF 4 ) gas can react with silicon to cause damage to the wafer, so it is rarely used in the ashing process of semiconductor front-end processing. In an embodiment of the present invention, carbon tetrafluoride (CF 4 ) gas flow is strictly controlled below 30sccm, so that carbon tetrafluoride (CF 4 ) gas can not only remove excess phospho...

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Abstract

The invention discloses an incineration treatment method. The method comprises the following steps: A, setting a treated body which is a phosphor-doped polycrystalline silicon wafer in an incineration chamber of a vacuum environment; B, introducing mixed gas consisting of oxygen gas, carbon tetrafluoride (CF4) gas and diimide gas (N2H2) into the incineration chamber, and treating the mixed gas byplasma so as to incinerate the phosphor simple substance on the surface of the treated body; and C, placing the treated body in a high-temperature environment, introducing the mixed gas consisting ofthe oxygen gas, the CF4 gas and the N2H2 gas into the incineration chamber, and treating the mixed gas by the plasma so as to incinerate the phosphide on the surface of the treated body. The incineration treatment method can effectively remove impurities left on the surface of the wafer during pre-doping the polycrystalline silicon so as to increase the rate of good wafer of an integrated circuit.

Description

technical field [0001] The invention relates to the technical field of integrated circuit processing and manufacturing, in particular to an ashing treatment method for a semiconductor manufacturing process. Background technique [0002] In the 65nm semiconductor process, since the device dimension is very small, the polysilicon pre-doping process (Poly pre-doping process) is often used to construct the PN junction. Multiple pre-doping processes will form residual impurities of dopants on the wafer surface, which include elemental phosphorus remaining from doping and phosphides generated during the doping process. Therefore, an ashing process needs to be performed after the polysilicon pre-doping process to remove impurities on the wafer surface. After the ashing process, a wet etching process is first used, and then a polysilicon photolithography process is used to manufacture a semiconductor integrated circuit wafer. [0003] For the polysilicon pre-doping process of N+ju...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
Inventor 韩秋华杜姗姗韩保东
Owner SEMICON MFG INT (BEIJING) CORP