Slope and peak integrated control circuit for insulated gate bipolar transistor

Abstract

The invention relates to a slope and peak integrated control circuit for an insulated gate bipolar transistor, which is characterized by comprising an insulated gate bipolar transistor, a slope and peak integrated control circuit, a gate drive circuit and a main circuit, wherein the gate of the insulated gate bipolar transistor is connected with the output end of the slope and peak integrated control circuit and one output end of the gate drive circuit in parallel; the input end of the slope and peak integrated control circuit is connected with the collector of the insulated gate bipolar transistor and one input end of the main circuit in parallel; and the other output end of the gate drive circuit is connected with the emitter of the insulated gate bipolar transistor and the other input end of the main circuit in parallel. In the invention, because resistors, capacitors, Zener diodes and other small simple components are used for forming the slope and peak integrated control circuit which is directly crossed between the collector and the gate of the insulated gate bipolar transistor, the topological structure of the circuit is simplified, and the reliability of the circuit is improved. The invention can be widely applied to various devices in the fields of electric power and electronics.

Description

technical field [0001] The invention relates to a control circuit of a power semiconductor device, in particular to a slope and peak integrated control circuit for an insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) in the field of power electronics. Background technique [0002] IGBT is currently the most widely used turn-off power electronic device. It is used in everything from low-voltage electrical appliances to high-voltage power transmission and distribution equipment, from civil power facilities to military equipment, and from traditional thermal power generation to new energy power generation. In ordinary applications, the operation requirements can be met by using ordinary IGBT control and protection circuits. However, in some special application fields, IGBT devices must carry very high voltage and high current, and even require IGBT to operate in series, such as high-voltage electronic switches, high-voltage pulse power supplies, high-v...

AI Technical Summary

Problems solved by technology

Gate signal delay adjustment, especially online adjustment, the control circuit must be able to adapt to the IGBT characteristics that change with temperature rise, so it is more complicated and less reliable

Miller capacitive servo control is also difficult in practice, because it is difficult to accurately locate the start and end moments of the Miller effect

The method of tracking the voltage reference value also includes specific measures, but either the number of IGBTs in series is limited, or the control circuit uses chips such as microprocessors and high-performance operational amplifiers, which are more complicated, less reliable and more expensive. high

The control circuit based on the gate RCD auxiliary circuit is simple and has high reliability, but the biggest problem is that it will cause significant oscillation of the IGBT collector-emitter voltage, and may even cause IGBT malfunction, endangering the safety of the equipment

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