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GaAs integrated optical chip based on deep etching waveguide for optical fiber gyroscope

A fiber optic gyroscope and integrated optics technology, applied in optics, nonlinear optics, Sagnac effect gyroscopes, etc., can solve the problems of restricting the use of devices, restricting applications, poor radiation resistance, etc., to reduce transmission loss, improve Modulation efficiency, compact device structure

Inactive Publication Date: 2010-07-07
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When light passes through LiNbO 3 When using materials, due to changes in ambient temperature, the optical transmission characteristics of the device will be affected, resulting in a temperature drift effect
Therefore, in order to ensure the stability of the device in a wide temperature range, temperature compensation measures must be taken, but this will make the peripheral control circuit more complicated;
[0004] 2. The radiation resistance of the material is poor, which limits its application in some environments with strong radiation;
[0005] 3. The material has strong piezoelectric properties, which limits the use of devices in certain applications;
[0006] 4. It cannot be used to make active devices such as light sources, detectors and optical amplifiers, which limits its application in optoelectronic monolithic integration

Method used

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  • GaAs integrated optical chip based on deep etching waveguide for optical fiber gyroscope
  • GaAs integrated optical chip based on deep etching waveguide for optical fiber gyroscope
  • GaAs integrated optical chip based on deep etching waveguide for optical fiber gyroscope

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Experimental program
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Effect test

Embodiment 1

[0032] See image 3 As shown, the chip substrate 5 adopts a doping concentration of 4×10 18 N + -GaAs, the lower confinement layer 4 is non-doped Ga 0.93 Al 0.07 As, its thickness is 3um, the core layer 3 is undoped GaAs, its thickness c=1um, and the upper confinement layer 2 is undoped Ga 0.79 Al 0.21 As, its thickness b=0.45um. The corrosion depth of the input single-mode waveguide 6 is b+c+d=1.75um, and the width of the input single-mode waveguide 6 is 4um. The upper electrode 1 is an Al film with a thickness of a=0.15 um, and the lower electrode 15 is a gold-germanium-nickel alloy.

[0033] When no modulation voltage is applied, since the left phase modulator 14 and the right phase modulator 13 can be used as polarizers at the same time, TE light and trace TM light are output through the left phase modulator 14 and the right phase modulator 13, and the two output lights There is no phase difference between them. When a voltage is applied to the left phase modulator 14 or th...

Embodiment 2

[0035] See image 3 As shown, the chip substrate 5 adopts a doping concentration of 4×10 18 N + -GaAs, the lower confinement layer 4 has a doping concentration of 1×10 17 Ga 0.93 Al 0.07 As, its thickness is 3um, the core layer 3 is undoped GaAs, its thickness c=1um, and the upper confinement layer 2 is undoped Ga 0.79 Al 0.21 As, its thickness b=0.45um. The corrosion depth of the input single-mode waveguide 6 is b+c+d=1.75um, and the width of the input single-mode waveguide 6 is 4um. The upper electrode 1 is an Al film with a thickness of a=0.15 um, and the lower electrode 15 is a gold-germanium-nickel alloy.

[0036] When no modulation voltage is applied, since the left phase modulator 14 and the right phase modulator 13 can be used as polarizers at the same time, TE light and trace TM light are output through the left phase modulator 14 and the right phase modulator 13, and the two output lights There is no phase difference between them. When a voltage is applied to the left...

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Abstract

The invention relates to a GaAs integrated optical chip based on deep etching waveguide for an optical fiber gyroscope. Light is input through a mono-mode waveguide and is connected into the input end of a 3dB coupler through an input waveguide of the 3dB coupler; the output end of the 3dB coupler is divided into two paths, wherein one path is connected with a left phase modulator through a left output waveguide and a left S-shaped curved waveguide of the 3dB coupler, and the other path is connected with a right phase modulator through a right output waveguide and a right S-shaped waved waveguide of the 3dB coupler. A deep etching waveguide structure means that both sides of an upper limit layer and a core layer of a waveguide are all etched, and both sides of the connection part between the upper limit layer and the core layer are partially etched. The deep etching waveguide structure can enhance the limitation of the waveguide to light so as to improve the modulation efficiency of the phase modulator. MMI is used as the 3dB coupler, which can not only reduce transmission loss of the coupler but also can make the structure of a device compact and reduce the total size of the device.

Description

Technical field [0001] The invention relates to an integrated optical chip for an optical fiber gyroscope, in particular to a GaAs integrated optical chip for an optical fiber gyroscope based on a deep corrosion waveguide. Background technique [0002] The multifunctional integrated optical chip for fiber optic gyroscope is one of the core components of the integrated optical interference fiber optic gyroscope (I-FOG) system. At present, most of the integrated chips for fiber optic gyroscopes commercialized at home and abroad are based on LiNbO 3 Material integrated optical device, LiNbO 3 The material has excellent optical transmission characteristics and linear electro-optical effects, and can be made into integrated optical devices with better performance; and the price is cheap, and the microfabrication technology is relatively simple, so it is based on LiNbO 3 The material of the device is cost-effective. But LiNbO 3 There are also the following problems in the application o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/035G01C19/72
Inventor 李陈刚肖司淼王明华杨建义李锡华
Owner ZHEJIANG UNIV