Growing method of semiconductor material and semiconductor substrate

Abstract

The invention relates to a growing method of a semiconductor material, comprising the following steps of: providing a growing substrate; forming a pit on the surface of the growing substrate; forming granular stuffing in the pit so as to cover the surface of the pit; growing seed crystal layer on the exposed part of the surface of the growing substrate; and transversely combining the seed crystallayer by adopting a lateral epitaxial process so as to form a continuous semiconductor layer. As a selectable technical scheme, the pit is a dislocation pit. The invention has the advantages that a method for forming the pit and adopting the granular stuffing to fill is adopted to replace an expensive and complicated photoetching method in the prior art, thereby saving the process cost and shortening process period. Further, the invention preferably adopts a method for forming the dislocation pit to form the pit, thereby selectively blocking the dislocation in the growing substrate, improvingthe blocking efficiency of the barrier layer on the dislocation in an ELOG method, preventing the dislocation in the growing substrate from extending to an epitaxial layer and reducing the dislocation density in the epitaxial layer.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor materials, in particular to a method for growing semiconductor materials and a semiconductor substrate. 【Background technique】 [0002] Compound semiconductor materials represented by GaN are used as wide-bandgap semiconductor materials with direct bandgap in blue, green, purple, ultraviolet and white light-emitting diodes (LEDs), laser diodes (LDs), ultraviolet light detectors and power electronic devices, etc. Optoelectronic devices and electronic devices, as well as semiconductor devices under special conditions, have broad application prospects and attract people's strong interest. [0003] Since most of the compound semiconductors currently cannot obtain commercial high-quality bulk substrate materials, the compound semiconductor materials are generally grown by heterogeneous substrate epitaxy. However, due to the large lattice mismatch between the semiconductor material and the sapphire (or S...

AI Technical Summary

Problems solved by technology

[0005] The disadvantage of ELOG in the prior art is that it needs to go through multiple photolithography and growth steps, so the process is complicated, the cost is high and the cycle is long, and it is not suitable for industrialization.

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