Perfusion method and device of protection glue for chip insulation

A protective glue and chip technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the long-term stability of protective glue, not taken into account, etc., to improve surface breakdown voltage, good insulation effect, simple structure
CN101770960AActive Publication Date: 2010-07-07ZHUZHOU CRRC TIMES SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
ZHUZHOU CRRC TIMES SEMICON CO LTD
Publication Date
2010-07-07

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Abstract

The invention discloses a perfusion method of protection glue for chip insulation, comprising the following steps: 1) after the protection glue is poured in a closed container, the closed container vacuumizes the protection glue and maintains vacuum for some time; 2) a chip is arranged in a glue perfusion mold; 3) the protection glue is pressurized and poured in the glue perfusion mold; 4) and the chip is taken out after the protection glue is cured. As the closed container is adopted to vacuumize the protection glue, air bubbles in the protection glue are extruded by the protection glue to be discharged due to negative pressure, the cured protection glue forms a compact structure, a protection glue layer has good insulation effect, and therefore the surface breakdown voltage of the chip is enhanced. The invention discloses a device adopting the method to pour the protection glue at the same time.
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Description

Technical field

[0001] The present invention relates to a chip insulation protection technology, in particular to a protective glue pouring method for chip insulation and a device for pouring protective glue using the method. Background technique

[0002] With the advancement of power device manufacturing technology, power thyristors and rectifiers are developing in the direction of large current and high voltage. In order to increase the working voltage of the device, the internal breakdown voltage and the surface breakdown voltage of the chip must be increased at the same time. Regarding the surface breakdown voltage of the chip, in the current technical field, the method commonly used internationally and domestically is to grind one or more angles on the silicon edge mesa of the chip, and then conduct insulation protection in the polished area to reduce The strength of the electric field at the edge of the chip silicon, thereby increasing the surface breakdown voltage of the ...

Claims

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