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Gallium-lanthanum silicate serial crystal high-temperature zero-temperature compensating cut type and application

A gallium lanthanum silicate, zero temperature technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of zero temperature compensation that has not been reported, and achieve high electromechanical coupling coefficient temperature stability and frequency stability High, suitable for a wide range of temperature effect

Active Publication Date: 2010-07-14
山东本源晶体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Zero temperature compensation of gallium lanthanum silicate series crystals under high temperature environment has not been reported

Method used

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  • Gallium-lanthanum silicate serial crystal high-temperature zero-temperature compensating cut type and application
  • Gallium-lanthanum silicate serial crystal high-temperature zero-temperature compensating cut type and application
  • Gallium-lanthanum silicate serial crystal high-temperature zero-temperature compensating cut type and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1: Zero-temperature-compensated cutting of gallium lanthanum tantalate crystal

[0035] 1. If figure 1 Shown, gallium lanthanum tantalate crystal positive d 11 The direction of is taken as the positive direction of X, and the Y and Z directions are determined according to the right-hand spiral rule. YXltw(α) means that the thickness direction is Y, the length direction is X, and the length direction, that is, the X direction is rotated by the angle α according to the right-hand spiral rule, α=-20°, and the LGT cut sample YXltw(-20°) is processed according to the above method , sample size is 1.5×9.0×9.0mm 3 .

[0036] 2. Platinum electrodes are plated on the thickness direction of LGT-cut samples. The electrode thickness is 200nm. Place the platinum-plated sample devices in a program-controlled heating furnace to test the frequency and temperature characteristics to eliminate electromagnetic interference. The temperature range is set to: 20-500°C . Use the ...

Embodiment 2

[0039] As in Example 1, the difference is that the YXltw (-25°) cut type is also used, and the sample size is 0.6×12.0×12.0mm 3 The frequency of the frequency device is measured in the range of 20-500 ℃, and the frequency change with temperature is measured, and the temperature stability of the frequency device is within 8ppm / ℃, see image 3 shown.

Embodiment 3

[0041] As in Example 1, the difference is that the sample angle is processed as YXltw (-10°), and the sample size is 0.6×9.0×9.0mm 3 The frequency of the frequency device is measured in the range of 20-500°C, and the frequency change with temperature is measured, and the temperature stability of the frequency device is within 15ppm / °C, see image 3 shown.

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Abstract

The invention relates to a gallium-lanthanum silicate serial crystal high-temperature zero-temperature compensating cut type and application. As for a gallium-lanthanum silicate serial crystal of 32 point groups, a positive d11 direction is taken as the positive direction of x, y and z directions are determined according to a right-hand screw rule; the thickness direction of the crystal is Y, the length direction is X, an alpha angle is rotated in the X direction according to the right-hand screw rule and is marked as YXltw(alpha), the alpha is larger than -90 degrees and smaller than 20 degrees, the alpha is anticlockwise rotated, and the -alpha is clockwise rotated; and the dimensional proportion of the thickness, the width and the length of the cut type is 0.2-2:6-12:6-12. The gallium-lanthanum silicate serial crystal high-temperature zero-temperature compensating cut type and a frequency device of the invention have the characteristics of high frequency stability, wide adaptive temperature range, simple wafer processing and the like.

Description

technical field [0001] The invention relates to a gallium lanthanum silicate series crystal high-temperature zero-temperature compensation cutting type and its application, which is used in aerospace, metallurgical drilling and other places that need to be used for high-temperature sensing, and belongs to the field of high-temperature sensors. Background technique [0002] Gallium lanthanum silicate series crystals have excellent piezoelectric properties and are widely used in radio frequency control devices (resonators) and nuclear selective devices (filters). They are key components in electronic equipment, telemetry navigation and communication systems. With the development of sensing technology and the development of aerospace technology, crystals such as quartz and lithium niobate can no longer meet the requirements of sensing technology in a wide temperature range (<900°C). The series of crystals include La 3 Ga 5.5 Nb0 5 o 14 (LGN), La 3 Ga 5.5 Ta 0.5 o 14 ...

Claims

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Application Information

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IPC IPC(8): C30B29/34G01D3/036
Inventor 于法鹏袁多荣张树君潘立虎尹鑫郭世义段秀兰赵显
Owner 山东本源晶体科技有限公司
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