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Field-by-field laser annealing and feed forward process control

An area and laser technology, applied in the field of wafer scanning and annealing systems, can solve problems affecting the performance of integrated circuits

Active Publication Date: 2012-11-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] While the traditional LSA arc-scanning method overcomes some of the disadvantages of RTA, the semiconductor wafer 100 may have greater variations in material properties that are difficult to account for using the traditional LSA method
These material variations may extend from one die to another, which may adversely affect the performance of integrated circuits formed on these dies and wafer 100

Method used

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  • Field-by-field laser annealing and feed forward process control
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  • Field-by-field laser annealing and feed forward process control

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Embodiment Construction

[0024] An improved system and method for performing laser spike annealing (LSA) scanning is now described as follows. LSA scanning can be done by Figure 6 Controlled by processor 601 shown.

[0025] Figure 6 is a block diagram of an example system. Such as Figure 6 As shown, a semiconductor wafer 600 is placed on a base 602, wherein the base 602 can move as indicated by the arrows. Laser source 604 projects beam 606 onto semiconductor wafer 600 at an angle θ from an axis perpendicular to the plane of semiconductor wafer 600 . The processor 601 controls at least one parameter of the laser source 604 and receives laser information (which may include laser parameter setting and / or measurement). The processor 601 is also connected to the base 602 for controlling the base and receiving position data of the base. The processor 601 reads data and computer program instructions from the computer-readable storage medium 603, and stores data into the computer-readable storage me...

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Abstract

The invention relates to a field-by-field laser annealing and feed forward process control. A method includes dividing a semiconductor wafer into a plurality of dies areas, generating a map of the semiconductor wafer, scanning each of the plurality of die areas of the semiconductor wafer with a laser, and adjusting a parameter of the laser during the scanning based on a value of the die areas identified by the map of the semiconductor wafer. The map characterizing the die areas based on a first measurement of each individual die area.

Description

technical field [0001] The system and method of the present invention generally relate to semiconductor technology, in particular to a system and method for wafer scanning and annealing. Background technique [0002] Semiconductor devices are shrinking in size and gate dielectrics are getting thinner. At such small dimensions, any tunneling through the gate dielectric layer to the underlying channel region significantly increases gate-to-channel leakage and increases power dissipation. Thus gate dielectrics are required to have high density and less porosity. [0003] High-k (dielectric constant) materials are commonly used as gate dielectrics for metal oxide semiconductor field effect transistor (MOSFET) devices. However, high-k materials have the disadvantage of being less dense than traditional thermally grown, low-k silicon dioxide. One way to improve density is annealing, which increases the density of the material and thereby improves its electrical properties. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/268H01L21/66G11C11/34
CPCH01L22/34H01L22/20H01L21/268H01L22/14H01L21/28185
Inventor 杨宗儒陈其贤黃循康
Owner TAIWAN SEMICON MFG CO LTD